Flash memory structure and its control method

Abstract

The present invention relates to a flash memory structure, comprising: a nanowire formed on a substrate, along the extending direction of the nanowire, a channel region and source terminals located on both sides of the channel region are arranged on the nanowire and a drain terminal, the source terminal and the drain terminal are respectively connected to the source region and the drain region in the substrate; and a first surrounding gate structure and a second surrounding gate structure, along the direction perpendicular to the nanowire In the extending direction of the channel region, the first surrounding gate structure and the second surrounding gate structure are isolated from each other and enclosed on both sides of the channel region. The flash memory device using the flash memory structure in the present application can improve the storage capacity compared with the flash memory device in the double-bit and unit storage mode. In the flash memory structure, the channel region is designed on the nanowire on the substrate, so that both the first surrounding gate structure and / or the second surrounding gate structure have good electrostatic control ability on the channel region, which is beneficial to resist the shrinkage of the device size The problems of short channel effect and gate leakage encountered when encountering.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a flash memory structure and a control method thereof. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits and digital / analog hybrid circuits. Among them, memory devices are an important type in digital circuits. Among storage devices, the development of flash memory (Flash Memory) is particularly rapid in recent years. The main feature of flash memory is that it can keep stored information for a long time without power on; and it has the advantages of high integration, fast access speed, easy erasing and rewriting, etc., so it has been widely used in many fields such as microcomputer and automatic control. a wide range of applications. [0003] In the existing flash memory, the structure of 1-bit storage method (Single-Bit) or double-bit storage method (2-Bit) i...

AI Technical Summary

Problems solved by technology

[0003] In the existing flash memory, the structure of 1-bit storage method (Single-Bit) or double-bit storage method (2-Bit) is usually used for storage, but the storage capacity of the design of two storage bits is relatively small, which cannot meet the requirements of the current market. Mass Storage Requirements

And under the guidance of Moore's Law, the size of flash memory devices is getting smaller and smaller, but it cannot be reduced infinitely, because when it is reduced to a certain extent to make it reach its physical limit, serious short-channel effects and gate leakage currents will appear

Images