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Extended cavity surface light source VCSEL and application thereof

A surface light source and extended cavity technology, applied in the field of lasers, can solve the problems of inconvenient application process, wide bandwidth, and large beam divergence angle, and achieve the effect of reducing beam divergence angle and bandwidth.

Pending Publication Date: 2019-03-01
EVERBRIGHT INST OF SEMICON PHOTONICS CO LTD
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  • Application Information

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Problems solved by technology

[0002] At present, the transverse mode of the widely used vertical cavity surface emitting laser (VCSEL) is generally a high-order mode, which has the following problems: uneven spot, scattered light intensity distribution, large beam divergence angle, wide bandwidth, etc., which cause a lot of inconvenience to the application process

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  • Extended cavity surface light source VCSEL and application thereof
  • Extended cavity surface light source VCSEL and application thereof

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Embodiment Construction

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0024] Such as figure 1 , 2 As shown, the present invention provides an extended cavity surface light source VCSEL, which includes: - an N-side electrode 1 , a substrate layer 2 , an epitaxial layer 3 , and a P-side electrode 4 .

[0025] Wherein, the P-face electrode 4 , the epitaxial layer 3 , the substrate layer 2 , and the -N-face electrode 1 are stacked sequentially from top to bottom. Preferably, the substrate layer 2 is a semi-insulating semiconductor...

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Abstract

The present invention provides an extended cavity surface light source VCSEL and the application thereof. The extended cavity surface light source VCSEL comprises: a -N surface electrode, a substratelayer, an epitaxial layer, and a P surface electrode. The P surface electrode, the epitaxial layer, the substrate layer, and the -N surface electrode are sequentially stacked from top to bottom. The Psurface electrode comprises: an upper DBR structure, an active layer structure, and a lower DBR structure. The upper DBR structure, the active layer structure, and the lower DBR structure are sequentially stacked from top to bottom; a resonant cavity of the extended cavity surface light source VCSEL is formed between the upper DBR structure and the lower DBR structure; and the end face of the upper DBR structure is further provided with a first dielectric film, and a second dielectric film is further arranged between the lower DBR structure and the epitaxial wafer. According to the technicalscheme of the present invention, by increasing the resonant cavity length of the semiconductor laser through the dielectric films and then changing the mode of the laser, a high-order mode beam is changed into a low-order mode beam, so that the beam divergence angle is reduced and the bandwidth is reduced.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to an extended cavity surface light source VCSEL and its application. Background technique [0002] At present, the transverse mode of the widely used vertical cavity surface emitting laser (VCSEL) is generally a high-order mode, which has the following problems: uneven spot, scattered light intensity distribution, large beam divergence angle, wide bandwidth, etc., which cause a lot of inconvenience to the application process . Therefore, in view of the above problems, it is necessary to propose a further solution. Contents of the invention [0003] The present invention aims to provide an extended cavity surface light source VCSEL and its application to overcome the deficiencies in the prior art. [0004] In order to solve the problems of the technologies described above, the technical solution of the present invention is: [0005] A VCSEL with an extended cavity surface light ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/187
CPCH01S5/183H01S5/187
Inventor 王俊谭少阳赵智德荣宇峰廖新胜
Owner EVERBRIGHT INST OF SEMICON PHOTONICS CO LTD
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