Multi-harmonic GaN/AlGaN resonant tunneling diode
A resonant tunneling and diode technology, applied in diodes, electrical components, circuits, etc., can solve the problems of only one, small quantum well width and barrier layer thickness, and limited application range.
Active Publication Date: 2019-03-29
HANGZHOU DIANZI UNIV
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[0002] For the conventional double-barrier quantum well GaN / AlGaN resonant tunneling diode (RTD) device, the application requires that it has obvious resonant tunneling characteristics at a lower operating voltage. Generally, the quantum well width and barrier layer thickness are relatively small, and the quantum size Due to the effect, there is generally only one effective resonant bound state energy level in its quantum well, so its resonant tunneling volt-ampere characteristics generally only have a set of current resonance peaks-valleys, which leads to its application range being limited to three-valued logic circuits and variable Analog Circuit Applications of Resistors
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[0027] as attached figure 2 shows a low-power GaN / AlGaN-based resonant tunneling diode, including an intrinsic GaN substrate 1, an AlN buffer layer 2, n + - GaN collector layer 3, i-GaN first isolation layer 4, i-AlGaN first barrier layer 5, i-GaN quantum well layer 6, i-AlGaN second barrier layer 7, i-GaN second barrier layer Isolation layer 8, i-GaN emitter layer 9, AlN, Si 3 N 4 or SiO 2 The passivation layer 10 and the metal electrode pin 11 in the collector area and the metal electrode pin 12 in the emitter area. Epitaxial AlN buffer layer 2 on the upper surface of intrinsic GaN substrate 1, epitaxial n on the upper surface of AlN buffer layer 2 + - GaN collector layer 3, n + - epitaxial i-GaN first isolation layer 4, i-AlGaN first potential barrier layer 5, i-GaN quantum well layer 6, i-AlGaN second potential barrier layer 7, i- GaN second isolation layer 8 and n + - GaN emitter layer 9; i-GaN first isolation layer 4, i-AlGaN first barrier layer 5, i-GaN quantum ...
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The invention relates to a multi-harmonic GaN / AlGaN resonant tunneling diode. The diode comprises a GaN substrate, an AlN buffer layer, an n+- GaN collector region layer, an i-GaN first isolation layer, an i-AlGaN first barrier layer, an i-GaN quantum well layer, an i-AlGaN second barrier layer , an i-GaN or i-InGaN second isolation layer, an n+- GaN emission region layer, an AlN passivation layer, a collector region metal electrode pin and an emission region metal electrode pin. The invention provides the multi-harmonic GaN / AlGaN resonant tunneling diode with multi-current oscillating peak-valley aimed at defects in the prior art, and has a plurality of sufficiently obvious and practical negative differential resistance region volt-ampere characteristics, and the volt-ampere characteristics have appropriate ratio of peak current to valley current in the plurality of negative differential resistance regions under sufficient low positive bias. The diode can realize a more colorful multiple-valued logic circuit and an application system thereof.
Description
technical field [0001] The invention relates to the technical field of compound semiconductor quantum devices, in particular to a multiharmonic GaN / AlGaN resonant tunneling diode. Background technique [0002] For the conventional double-barrier quantum well GaN / AlGaN resonant tunneling diode (RTD) device, the application requires that it has obvious resonant tunneling characteristics at a lower operating voltage. Generally, the quantum well width and barrier layer thickness are relatively small, and the quantum size Due to the effect, there is generally only one effective resonant bound state energy level in its quantum well, so its resonant tunneling volt-ampere characteristics generally only have a set of current resonance peaks-valleys, which leads to its application range being limited to three-valued logic circuits and variable Analog circuit applications of resistors. [0003] The present invention adopts molecular beam epitaxy (MBE) or metal organic chemical vapor d...
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IPC IPC(8): H01L29/88H01L29/20H01L29/06
CPCH01L29/0684H01L29/2003H01L29/882
Inventor 程子峰张海鹏白建玲张强耿露
Owner HANGZHOU DIANZI UNIV