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A kind of multi-harmonic gan/algan resonant tunneling diode

A resonant tunneling and diode technology, applied in the direction of diodes, semiconductor devices, electrical components, etc., can solve the problems of small quantum well width and barrier layer thickness, only one, and limited application field

Active Publication Date: 2022-04-01
HANGZHOU DIANZI UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0002] For the conventional double-barrier quantum well GaN / AlGaN resonant tunneling diode (RTD) device, the application requires that it has obvious resonant tunneling characteristics at a lower operating voltage. Generally, the quantum well width and barrier layer thickness are relatively small, and the quantum size Due to the effect, there is generally only one effective resonant bound state energy level in its quantum well, so its resonant tunneling volt-ampere characteristics generally only have a set of current resonance peaks-valleys, which leads to its application range being limited to three-valued logic circuits and variable Analog Circuit Applications of Resistors

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  • A kind of multi-harmonic gan/algan resonant tunneling diode
  • A kind of multi-harmonic gan/algan resonant tunneling diode
  • A kind of multi-harmonic gan/algan resonant tunneling diode

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[0027] as attached figure 2 shows a low-power GaN / AlGaN-based resonant tunneling diode, including an intrinsic GaN substrate 1, an AlN buffer layer 2, n + - GaN collector layer 3, i-GaN first isolation layer 4, i-AlGaN first barrier layer 5, i-GaN quantum well layer 6, i-AlGaN second barrier layer 7, i-GaN second barrier layer Isolation layer 8, i-GaN emitter layer 9, AlN, Si 3 N 4 or SiO 2 The passivation layer 10 and the metal electrode pin 11 in the collector area and the metal electrode pin 12 in the emitter area. Epitaxial AlN buffer layer 2 on the upper surface of intrinsic GaN substrate 1, epitaxial n on the upper surface of AlN buffer layer 2 + - GaN collector layer 3, n + - epitaxial i-GaN first isolation layer 4, i-AlGaN first potential barrier layer 5, i-GaN quantum well layer 6, i-AlGaN second potential barrier layer 7, i- GaN second isolation layer 8 and n + - GaN emitter layer 9; i-GaN first isolation layer 4, i-AlGaN first barrier layer 5, i-GaN quantum ...

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Abstract

The invention relates to a multi-harmonic GaN / AlGaN resonant tunneling diode. The present invention includes GaN substrate, AlN buffer layer, n + ‑GaN collector layer, i‑GaN first isolation layer, i‑AlGaN first barrier layer, i‑GaN quantum well layer, i‑AlGaN second barrier layer, i‑GaN or i‑InGaN second isolation layer, n + ‑GaN emitter layer, AlN passivation layer, collector metal electrode pins and emitter metal electrode pins. Aiming at the deficiencies of the prior art, the present invention provides a multi-harmonic GaN / AlGaN resonant tunneling diode with multiple current oscillation peaks and valleys, which has sufficiently obvious and practical volt-ampere characteristics of multiple negative differential resistance regions, and its volt-ampere The multiple negative differential resistance regions under sufficiently low positive bias voltage have appropriate peak current to valley current ratio, which can realize more colorful multi-valued logic circuits and their application systems.

Description

technical field [0001] The invention relates to the technical field of compound semiconductor quantum devices, in particular to a multiharmonic GaN / AlGaN resonant tunneling diode. Background technique [0002] For the conventional double-barrier quantum well GaN / AlGaN resonant tunneling diode (RTD) device, the application requires that it has obvious resonant tunneling characteristics at a lower operating voltage. Generally, the quantum well width and barrier layer thickness are relatively small, and the quantum size Due to the effect, there is generally only one effective resonant bound state energy level in its quantum well, so its resonant tunneling volt-ampere characteristics generally only have a set of current resonance peaks-valleys, which leads to its application range being limited to three-valued logic circuits and variable Analog circuit applications of resistors. [0003] The present invention adopts molecular beam epitaxy (MBE) or metal organic chemical vapor d...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/88H01L29/20H01L29/06
CPCH01L29/0684H01L29/2003H01L29/882
Inventor 程子峰张海鹏白建玲张强耿露
Owner HANGZHOU DIANZI UNIV