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Semiconductor device

A semiconductor and conductivity-type technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve the problem of higher hole current density

Active Publication Date: 2022-03-04
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the current density of holes increases, causing latch-up operation

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

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Embodiment Construction

[0034] Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, all combinations of the features described in the embodiments are not necessarily essential to the technical solutions of the invention.

[0035] In this example, the X axis and the Y axis are axes perpendicular to each other in a plane parallel to the upper surface of the semiconductor substrate. In addition, let the axis perpendicular to the X axis and the Y axis be the Z axis. It should be noted that, in this specification, the direction parallel to the Z-axis may be referred to as the depth direction of the semiconductor substrate.

[0036] It should be noted that in this specification, the terms "up", "down", "above" and "below" are not limited to the up and down directions in the direction of gravity. These terms simply refer to a relative orientation with respect to a predetermi...

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Abstract

Provide a semiconductor device with a transistor and diode, and the crystal pipe department has: the drifting area of the first -guide electrons to form the interior of the semiconductor substrate;Above; and the second -guide electrical collector area, the interior of the semiconductor substrate is set below the drifting area. The semiconductor device has a second -directed electrical trap area.Until the position below is set to the bob area, the semiconductor device is at least part of the area below the trap area. The load injection volume of the second -guide electrons with a unit area is smaller than the small injection limit of the collector area.

Description

technical field [0001] The present invention relates to semiconductor devices. Background technique [0002] A power IGBT (Insulated Gate Bipolar Transistor) having a plurality of cell arrays is known. In the cell array region where the cell density is lower than other cell array regions, the injected holes are difficult to be removed through the source electrode. As a result, the current density of holes increases, which may cause a latch-up operation. Therefore, it is known that the P-type doping concentration on the back side of the substrate in the low-density cell array region is lower than that of the P-type doping concentration on the back side of the substrate in the other cell array regions, or that the low-density cell A technique for preventing latch-up by doping the back side of the substrate in the array region with an N-type dopant (see, for example, Patent Document 1). [0003] prior art literature [0004] patent documents [0005] Patent Document 1: Jap...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L21/8234H01L27/06H01L29/06H01L29/12H01L29/78
CPCH01L21/8234H01L29/739H01L29/78H01L27/06H01L29/06H01L29/12H01L29/7397H01L29/0834H01L29/7395H01L29/0619H01L27/0727H01L29/861H01L29/1095H01L29/0696H01L29/7393H01L29/8611H01L27/0635
Inventor 松井俊之
Owner FUJI ELECTRIC CO LTD