Mixing and stirring integrated facility for producing and processing semi-conductive materials

Abstract

The invention provides a mixing and stirring integrated facility for producing and processing semi-conductive materials. The facility comprises a driving wheel and a manual rocking handle; a power supply control box is mounted on the right side of a support base, the support base is of a frame structure, and a mixing barrel is mounted in the top of the support base; the interior of the mixing barrel is of a hollow structure, and the top of the mixing barrel is provided with a feed inlet; a stirring motor is mounted on the end face of the bottom of the mixing barrel and electrically connected with the power control box through a power supply circuit; the bottom of a mixing shaft is connected with the top of the stirring motor, and the mixing shaft rotates in the mixing barrel; the stirringframe is mounted on the mixing shaft, and stirring blades are mounted on the stirring frame; a heating ring is mounted in the mixing barrel, and a vibration motor is mounted outside the mixing barrel.The facility is beneficial to mixing and stirring of the semi-conductive raw materials contained in a device, so that the semi-conductive raw materials are mixed more uniformly, and the mixing quality of the semi-conductive materials is ensured.

Description

technical field [0001] The invention belongs to the technical field of production and processing of semiconductive materials, and more specifically relates to an integrated mixing and stirring facility for production and processing of semiconductive materials. Background technique [0002] Semi-conductive composite materials are widely used in high-voltage cables, for example, between the conductor and the insulating layer to uniform the electric field. Especially in high-voltage DC cables, due to the accumulation of space charges in the insulating layer, it is easy to cause electric field distortion, resulting in accelerated aging and even breakdown. A large number of studies have shown that the charge in the cable insulation layer is not only derived from the metal core, but also closely related to the charge emission of the semiconductive composite material. [0003] The inventors found that there are existing similar mixing and stirring integrated facilities for the pro...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above-mentioned technical problems, the present invention provides an integrated mixing and stirring facility for the production and processing of semiconductive materials to solve the problem of the existing similar facilities, which have poor heating and mixing effects on granular semiconductive raw materials, and the semiconductive raw materials are prone to contain Unevenness occurs, which affects the mixing effect of semi-conductive materials; and the effect of defoaming inside semi-conductive raw materials is poor, and semi-conductive raw materials after mixing and stirring tend to contain more bubbles inside, which affects the use effect of semi-conductive materials

Images