A construction method of antimony tellurium selenide base alloy for thermoelectric materials, antimony tellurium selenide based thermoelectric material

A technology of thermoelectric materials and matrix alloys, applied in the direction of thermoelectric device lead-out wire materials, thermoelectric device manufacturing/processing, etc., can solve the problems of high preparation cost and inability to mass industrial production, and achieve low cost and excellent performance Effect

CN109671840BActive Publication Date: 2020-06-19ZHEJIANG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2020-06-19

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Abstract

The invention discloses a method for constructing an antimony-tellurium-selenide matrix alloy used for thermoelectric materials, comprising: constructing the matrix alloy with the chemical formula Sb 2 Te 3‑x Se x , where 0≤x≤3, the energy band structure of the matrix alloy is calculated from the first principles, and the matrix alloy with the highest degeneracy is selected through the energy band structure, and the corresponding chemical formula is Sb 2 Te 3‑x′ Se x′ , where 0≤x′≤3; zone melting method to prepare Sb 2 Te 3‑x″ Se x″ , the value of x″ is x′‑0.5≤x″≤x′+0.7; the matrix alloy Sb prepared by testing 2 Te 3‑x″ Se x″ The thermoelectric performance further determines the matrix alloy with the highest degeneracy as the matrix alloy for the preparation of antimony tellurium selenide based thermoelectric materials. The invention also discloses an antimony tellurium selenide-based thermoelectric material, which includes a matrix alloy Sb 2 TeSe 2 And the dopant M, M is selected from one or a combination of at least two of Ag, Cu, Sn, Pb; the antimony tellurium selenide based thermoelectric material is expressed as Sb 2‑y m y TeSe 2 , where 0.8≤y≤1.965. The antimony, tellurium, selenide-based thermoelectric material provided by the invention has an optimal thermoelectric figure of merit in the temperature range of 500-800K of at least 0.4, which is at least 100% higher than that of the antimony, tellurium, selenide base alloy.
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Description

technical field

[0001] The invention belongs to the field of semiconductor thermoelectric materials, and in particular relates to a construction method of an antimony tellurium selenium matrix alloy used for thermoelectric materials and an antimony tellurium selenide based thermoelectric material. Background technique

[0002] With the rapid development of world technology and economy, the global energy demand continues to increase. Solving the contradiction between energy supply and demand to achieve sustainable development is the development direction of human society at this stage. Thermoelectric materials realize the mutual conversion between thermal energy and electrical energy through the transport and interaction of carriers and phonons. Devices made of thermoelectric materials have outstanding advantages such as small size, no noise, no pollution, and simple structure, and have important application prospects in thermoelectric refrigeration and waste heat power gene...

Examples

Embodiment 1

[0054] (1) Pulverize Sb blocks, Te blocks and Se blocks with a commercial purity of 5N;

[0055] (2) Pour dilute nitric acid solution into a quartz tube with an inner diameter of about 12mm sealed at one end, ultrasonically clean it for 15-20 minutes, then wash it twice with water and once with absolute ethanol, and then put the quartz tube in an oven at 100°C Dry for 8 hours;

[0056] (3) According to the chemical formula Sb 2 Te 3-x Se x The stoichiometric ratio of each element in the step (1) is taken by weighing a total of 80g of raw materials, and put into a dried quartz tube, wherein x=1.5, 1.8, 1.9, 2.0, 2.1, 2.4, 2.7;

[0057] (4) the vacuum degree of quartz tube in step (3) is pumped to 10 -3 Pa, and seal the other end of the quartz tube with an oxyhydrogen flame;

[0058] (5) Melting the quartz tube in step (4) in a rotary melting furnace at 800°C for 10 hours, rotating continuously during the melting process to ensure sufficient mixing of raw materials, cooling...

Embodiment 2

[0067] Such as figure 2 As shown, the preparation method of antimony tellurium selenide based thermoelectric material is as follows:

[0068] (1) Pulverize Sb blocks, Ag blocks, Te blocks and Se blocks with a commercial purity of 5N;

[0069] (2) Pour dilute nitric acid solution into a quartz tube with an inner diameter of about 12mm sealed at one end, ultrasonically clean it for 15-20 minutes, then wash it twice with water and once with absolute ethanol, and then put the quartz tube in an oven at 100°C Dry for 8 hours;

[0070] (3) Add the dopant Ag, according to the chemical formula Sb2-y Ag y TeSe 2 The stoichiometric ratio of each element in the step (1) takes by weighing 80g of raw materials altogether, puts in the quartz tube after drying, wherein y=0.005~0.03;

[0071] (4) the vacuum degree of quartz tube in step (3) is pumped to 10 -3 Pa, and seal the other end of the quartz tube with an oxyhydrogen flame;

[0072] (5) Melting the quartz tube in step (4) in a ro...

Embodiment 3

[0077] (1) Pulverize Sb lumps, Ag lumps, Pb lumps, Cu lumps, Te lumps and Se lumps with a commercial purity of 5N;

[0078] (2) Pour dilute nitric acid solution into a quartz tube with an inner diameter of about 12mm sealed at one end, ultrasonically clean it for 15-20 minutes, then wash it twice with water and once with absolute ethanol, and then put the quartz tube in an oven at 100°C Dry for 8 hours;

[0079] (3) Add dopant Ag block, Pb block, Cu block, according to the chemical formula Sb 1.98-z Ag 0.02 Cu z TeSe 2 , Sb 1.98- m Ag 0.02 Pb m TeSe 2 The stoichiometric ratio of each element in the step (1) takes by weighing 80g of raw materials altogether, puts in the quartz tube after drying, wherein z=0.005~0.015, m=0.005~0.015;

[0080] (4) the vacuum degree of quartz tube in step (3) is pumped to 10 -3 Pa, and seal the other end of the quartz tube with an oxyhydrogen flame;

[0081] (5) Melting the quartz tube in step (4) in a rotary melting furnace at 800°C fo...