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A kind of asymmetric structure high-power laser with Bragg reflector and its preparation method

A high-power laser and Bragg reflector technology, applied in the field of lasers, can solve the problems of sensitive working temperature, large diffusion coefficient, sensitive memory effect, etc., and achieve the effects of wide wavelength tuning range, high power stability, and narrow spectral line width.

Active Publication Date: 2022-02-18
潍坊华光光电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, (1) due to the lower barrier height, electron and hole carriers are easy to leak, resulting in lower internal quantum efficiency and more sensitive to operating temperature; (2) the confinement layer requires a higher carrier concentration to reduce the series Resistance, the commonly used dopant of P confinement layer, Zn has a low doping concentration in Al(Ga)InP and has a large diffusion coefficient, Mg is more sensitive to O elements, and has a strong memory effect at the same time, which is not conducive to improving high temperature reliability (3) The photon absorption capacity of holes in the p-type material region is larger than that of electrons in the n-type material region, and the asymmetric waveguide structure can only reduce the absorption of holes to light to a certain extent. There is an urgent need for more effective means to improve the internal quantum efficiency

Method used

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  • A kind of asymmetric structure high-power laser with Bragg reflector and its preparation method

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Embodiment 1

[0056] An asymmetric high-power laser with a Bragg reflector, such as figure 1 As shown, the GaAs substrate is included, and the GaAs buffer layer, GaAs buffer layer, Ga 1-x In x P transition layer, Al 1-x In x P lower confinement layer, (Al 1-x Ga x ) y In 1-y P lower waveguide layer, Ga 1-x In x P quantum well light-emitting region, (Al 1-x Ga x ) y In 1-y P upper waveguide layer, Al 1-x Ga x As Bragg reflector, Al 1-x Ga x As upper confinement layer and GaAs cap layer.

Embodiment 2

[0058] A kind of asymmetric structure high-power laser with Bragg reflector, structure as shown in embodiment 1, difference is, (Al 1-x Ga x ) y In 1-y The thickness of the waveguide layer under P is related to (Al 1-x Ga x ) y In 1-y The waveguide layers on P have different thicknesses, preferably 0.12 μm and 0.07 μm respectively.

Embodiment 3

[0060] A preparation method of an asymmetric structure high-power laser with a Bragg reflector, comprising the steps of:

[0061] (1) Put GaAs substrate in MOCVD equipment, H 2 The environment is heated to 720±10°C and baked for 30 minutes, and AsH is introduced 3 , remove water and oxygen on the surface of the GaAs substrate to complete the surface heat treatment, and prepare for step (2);

[0062] (2) Slowly lower the temperature to 700±10°C, and continue to feed TMGa and AsH 3 , grow a GaAs buffer layer with a thickness of 0.3 μm on the GaAs substrate;

[0063] (3) Keep the temperature at 700±10°C, continue to feed TMIn, TMGa and PH 3 , grow Ga on the GaAs buffer layer in step (2) 1-x In x P transition layer;

[0064] (4) Keep the temperature at 700±10°C, continue to feed TMIn, TMAl and PH 3 , Ga in step (3) 1-x In x Growth of n-type Al on P transition layer 1-x In x P lower limit layer;

[0065] (5) The temperature is lowered to 650±10°C, and TMIn, TMAl, TMGa a...

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Abstract

The invention relates to an asymmetric structure high-power laser with a Bragg reflector and a preparation method thereof, belonging to the field of lasers. 1‑x In x P transition layer, Al 1‑ x In x P lower confinement layer, (Al 1‑x Ga x ) y In 1‑y P lower waveguide layer, Ga 1‑ x In x P quantum well light-emitting region, (Al 1‑x Ga x ) y In 1‑y P upper waveguide layer, Al 1‑x Ga x As Bragg reflector, Al 1‑x Ga x As upper confinement layer and GaAs capping layer. The invention can obtain a narrower spectral line width, effectively reduce internal loss, reduce heat generation, improve electro-optical conversion efficiency, and improve the stability and life of the device, thereby realizing long-distance, multiple Road and other wider applications.

Description

technical field [0001] The invention relates to an asymmetric structure high-power laser with a Bragg reflector and a preparation method thereof, belonging to the technical field of lasers. Background technique [0002] Semiconductor lasers have many advantages such as small size, light weight, high reliability, high electro-optical conversion efficiency, and good beam quality, and are widely used in military, medical, industrial and many other fields. Most of the military, medical and industrial applications require semiconductor lasers to have high power output, but because high-power semiconductor lasers have a high internal loss mechanism, the electro-optic conversion efficiency is still very low, and a large amount of heat is generated during use. Device stability and lifetime are affected. [0003] Controlling heat generation plays an important role in the reliability of lasers, and the main source of these heat is the internal loss of semiconductor lasers. Therefore,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/187H01S5/343
CPCH01S5/34353H01S5/3436H01S5/3438H01S5/187
Inventor 刘飞邓桃王朝旺郑兆河
Owner 潍坊华光光电子有限公司
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