Asymmetric-structure high-power laser with Bragg reflector and preparation method thereof

Abstract

The invention relates to an asymmetric-structure high-power laser with a Bragg reflector and a preparation method thereof, and belongs to the field of lasers. The laser comprises a GaAs substrate, wherein a GaAs buffer layer, a Ga<1-x>In<x>P transition layer, an Al<1-x>InxP lower limiting layer, an (Al<1-x>Gax)yIn<1-y>P lower waveguide layer, a Ga<1-x>InxP quantum well light emitting region, a (Al<1-x>Gax) yIn<1-y>P upper waveguide layer, an Al<1-x>GaxAs Bragg reflection layer, an Al<1-x>GaxAs upper limiting layer and a GaAs cap layer are sequentially deposited on the GaAs substrate from bottom to top. According to the invention, a narrower spectral line width can be obtained, the internal loss is effectively reduced, the generation of heat is reduced, the electro-optical conversion efficiency is improved, the stability of the device is improved, the service life of the device is prolonged, and thus the 630-710nm series high-power semiconductor laser can be widely applied in long distance, multiple paths and the like.

Description

technical field [0001] The invention relates to an asymmetric structure high-power laser with a Bragg reflector and a preparation method thereof, belonging to the technical field of lasers. Background technique [0002] Semiconductor lasers have many advantages such as small size, light weight, high reliability, high electro-optical conversion efficiency, and good beam quality, and are widely used in military, medical, industrial and many other fields. Most of the military, medical and industrial applications require semiconductor lasers to have high power output, but because high-power semiconductor lasers have a high internal loss mechanism, the electro-optic conversion efficiency is still very low, and a large amount of heat is generated during use. Device stability and lifetime are affected. [0003] Controlling heat generation plays an important role in the reliability of lasers, and the main source of these heat is the internal loss of semiconductor lasers. Therefore,...

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Problems solved by technology

However, (1) due to the lower barrier height, electron and hole carriers are easy to leak, resulting in lower internal quantum efficiency and more sensitive to operating temperature; (2) the confinement layer requires a higher carrier concentration to reduce the series Resistance, the commonly used dopant of P confinement layer, Zn has a low doping concentration in Al(Ga)InP and has a large diffusion coefficient, Mg is more sensitive to O elements, and has a strong memory effect at the same time, which is not conducive to improving high temperature reliability (3) The photon absorption capacity of holes in the p-type material region is larger than that of electrons in the n-type material region, and the asymmetric waveguide structure can only reduce the absorption of holes to light to a certain extent. There is an urgent need for more effective means to improve the internal quantum efficiency

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