Three-dimensional memory device and preparation method thereof

A three-dimensional storage and device technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problem that the bottom of the channel hole cannot be opened and electrically connected to the substrate, and the side wall of the channel hole and its filling can be easily damaged. , channel holes are not easy to accurately align, etc., to achieve the effect of shortening the process cycle, high yield rate, and good structure
CN109712977AActive Publication Date: 2019-05-03YANGTZE MEMORY TECH CO LTD
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
YANGTZE MEMORY TECH CO LTD
Publication Date
2019-05-03

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Abstract

The invention provides a preparation method of a three-dimensional memory device. The method includes the following steps: sequentially forming an etching stop layer, a first stack, and first channelholes exposing the etching stop layer on a first substrate; forming a first polysilicon plug on a first sacrificial material layer filled in each of the first channel holes, and disposing a carrier wafer thereon; removing the first substrate, and forming a second stack and second channel holes on the other side of the etching stop layer to expose the etching stop layer; removing the etching stop layer between each of the first channel holes and each of the second channel holes, and removing the first sacrificial material layer; covering sidewalls of the first channel holes and the second channel holes with protective layers, and etching parts of the first stack and the second stack exceeding the remaining etching stop layer along radial directions of the channel holes, and removing the protective layers to form a through channel hole; and filling the through channel hole form a single channel. The invention also provides the three-dimensional memory device.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor devices, in particular to a three-dimensional storage device and a preparation method thereof. Background technique

[0002] A three-dimensional (3D) structured memory has a high integration density and a large storage capacity because memory cells are three-dimensionally arranged on a substrate, and thus has been more widely used in electronic products. In the single channel formation (single channel formation) of the three-dimensional flash memory device, the etching of the channel hole is carried out between the stack (deck) and the stack, during this period, the channel hole of the lower stack is temporarily filled with a sacrificial material, After the upper and lower stacks are etched open, the sacrificial material is removed, and the formed channel holes are filled together. However, usually the upper and lower stacked channel holes are not easy to be precisely aligned, and when the ...

Claims

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