A film bulk acoustic wave resonator capable of inhibiting transverse acoustic wave loss and a manufacturing method thereof
A thin-film bulk acoustic wave and resonator technology, applied to impedance networks, electrical components, etc., can solve problems such as lateral leakage, loss, and performance characteristics of resonators
Active Publication Date: 2019-05-03
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Problems solved by technology
The current resonator structure is mainly a sandwich structure of electrode-piezoelectric layer-electrode, which has a certain lateral leakage, which affects the performance characteristics of the resonator
[0004] The current optimization method is to use a polygonal structure or an asymmetric structure to increase the reflection of sound waves within the structure, but this method still has a corresponding loss
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[0034] In the following description, the present invention is described with reference to various examples. One skilled in the art will recognize, however, that the various embodiments may be practiced without one or more of the specific details, or with other alternative and / or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail so as not to obscure aspects of the various embodiments of the invention. Similarly, for purposes of explanation, specific quantities, materials and configurations are set forth in order to provide a thorough understanding of embodiments of the invention. However, the invention may be practiced without these specific details. Furthermore, it should be understood that the various embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale.
[0035] In this specification, reference to "one embodiment" or "the...
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The invention discloses a thin film bulk acoustic wave resonator capable of suppressing transverse acoustic wave loss. The thin film bulk acoustic wave resonator comprises a piezoelectric layer; The upper electrode which covers the piezoelectric layer along a first direction; The lower electrode which surrounds the bottom surface and the side surface of the piezoelectric layer along a second direction; And a substrate. Based on the film bulk acoustic wave resonator structure capable of inhibiting the loss of the transverse acoustic wave, the transverse acoustic wave leakage of the resonator can be well reduced, the resonance characteristic of the resonator is improved, and the film bulk acoustic wave resonator structure is convenient to develop towards the direction of high performance andlow power consumption.
Description
technical field [0001] The invention relates to the technical field of electronic communication, in particular to a film bulk acoustic wave resonator capable of suppressing transverse acoustic wave loss and a manufacturing method thereof. Background technique [0002] With the continuous development of communication technology, as well as the gradual enhancement of the functions of communication electronic equipment and the influence of gradually smaller volume, higher requirements are put forward for the volume and performance of devices in communication chips. Due to the excellent performance of the acoustic wave filter, it is widely used in many electronic devices. [0003] In the development of 5G communication in the future, the communication frequency will continue to develop towards high frequency. The thin film bulk acoustic wave filter with piezoelectric effect has great application value, and the thin film bulk acoustic wave resonator (FBAR) is the smallest compone...
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IPC IPC(8): H03H9/02H03H9/17H03H3/02
Inventor 欧文申洪霞
Owner NAT CENT FOR ADVANCED PACKAGING