A thin-film bulk acoustic wave resonator capable of suppressing transverse acoustic wave loss and its fabrication method
A thin-film bulk acoustic wave and resonator technology, applied in the direction of impedance network, electrical components, etc., can solve problems affecting the performance characteristics of resonators, lateral leakage, loss, etc., and achieve improved resonance characteristics, low power consumption, and reduced lateral acoustic leakage. Effect
Active Publication Date: 2022-07-12
NAT CENT FOR ADVANCED PACKAGING CO LTD
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Problems solved by technology
The current resonator structure is mainly a sandwich structure of electrode-piezoelectric layer-electrode, which has a certain lateral leakage, which affects the performance characteristics of the resonator
[0004] The current optimization method is to use a polygonal structure or an asymmetric structure to increase the reflection of sound waves within the structure, but this method still has a corresponding loss
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[0034] In the following description, the invention is described with reference to various embodiments. However, one skilled in the art will recognize that the various embodiments may be practiced without one or more of the specific details or with other alternative and / or additional methods, materials or components. In other instances, well-known structures, materials, or operations are not shown or described in detail so as not to obscure aspects of the various embodiments of the invention. Similarly, for purposes of explanation, specific quantities, materials and configurations are set forth in order to provide a thorough understanding of the embodiments of the invention. However, the present invention may be practiced without the specific details. Furthermore, it is to be understood that the various embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale.
[0035] In this specification, reference to "one embodiment" or "th...
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The invention discloses a thin-film bulk acoustic wave resonator for suppressing transverse acoustic wave loss, comprising: a piezoelectric layer; an upper electrode, the upper electrode covering the piezoelectric layer along a first direction; a lower electrode, the lower electrode along the first direction Two directions surround the bottom and side surfaces of the piezoelectric layer; and the substrate. Based on the thin-film bulk acoustic wave resonator structure for suppressing transverse acoustic wave loss of the present invention, the transverse acoustic wave leakage of the resonator can be well reduced, the resonance characteristics of the resonator are improved, and the structure of the thin-film bulk acoustic wave resonator can be improved to high performance and low power consumption. direction of development.
Description
technical field [0001] The invention relates to the technical field of electronic communication, in particular to a thin-film bulk acoustic wave resonator capable of suppressing transverse acoustic wave loss and a manufacturing method thereof. Background technique [0002] With the continuous development of communication technology and the gradual enhancement of the functions of communication electronic equipment, the influence of the gradually smaller volume has also put forward higher requirements for the volume and performance of the devices in the communication chip. Due to the excellent performance of acoustic wave filters, they are widely used in many electronic devices. [0003] In the future development of 5G communication, the communication frequency will continue to develop to high frequency, and the thin film bulk acoustic wave filter with piezoelectric effect has great application value, while the thin film bulk acoustic wave resonator (FBAR) is the smallest comp...
Claims
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IPC IPC(8): H03H9/02H03H9/17H03H3/02
Inventor 欧文申洪霞
Owner NAT CENT FOR ADVANCED PACKAGING CO LTD