Thin film solar cell and its preparation method

A solar cell and thin-film technology, applied in the field of solar cells, can solve the problems of increased product cost, double-sided thin-film solar cells to be deepened, low energy conversion efficiency of solar cells, etc.

Active Publication Date: 2022-06-03
WUXI UTMOST LIGHT TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, it is reported that its energy conversion efficiency can be higher than 20%, but the current energy conversion efficiency of solar cells is still low. In order to further improve the energy conversion efficiency of the battery, the researchers proposed a double-sided solar cell that simultaneously absorbs sunlight on both sides of the solar cell. At present, the research on double-sided solar cells is mainly concentrated on crystalline silicon solar cells. Few people have studied double-sided thin-film solar cells. The process is more complicated, and the material consumption also increases accordingly, thus greatly increasing the product cost
[0003] Therefore, the current research on double-sided thin film solar cells still needs to be deepened.

Method used

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  • Thin film solar cell and its preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] Test sample: Spiro-OMeTAD hole transport layers with different thicknesses are sequentially formed on a glass transparent substrate to obtain a test sample.

[0062] Test method: Test the light absorption properties of the above test samples under AM1.5G conditions, see the test results and AM1.5G spectral irradiance distribution Figure 9 .

[0063] Figure 9 The spectral irradiance distribution of AM1.5G and the absorption properties of the Spiro-OMeTAD hole transport layer as a function of wavelength and thickness are shown. exist Figure 9 It can be seen that Spiro-OMeTAD, which is a hole transport layer, has a large absorption of light in the wavelength range of 300-400 nm. While this is no problem for single-sided cells (light irradiation on the front side only), in the case of light irradiation on the back side (bifacial cells), although light incidence from both sides has a larger current gain, the There is still some optical loss. Since the light absorptio...

Embodiment 2

[0065] Test sample: The test sample is a plurality of solar cells, the solar cells include a glass transparent substrate, an electron transport layer (titanium dioxide, thickness of 40nm), a perovskite light absorption layer (thickness of 500nm), a hole transport layer ( Spiro-OMeTAD, thickness of 150nm), encapsulation layer and backsheet (glass), the thickness of hole transport layer in multiple solar cells is different, respectively 0nm (ie, does not include hole transport layer), 25nm, 50nm, 75nm , 100nm, 150nm and 200nm.

[0066] Test method: simulate and calculate the photo-generated current density Jph of the above-mentioned multiple solar cells according to the conventional basic logic method in the art.

[0067] Figure 10 The resulting graph of the photogenerated current density Jph as a function of the thickness of the hole transport layer (spiro-OMeTAD) is shown. In this example, in order to analyze the only effect of the thickness of the hole transport layer on t...

Embodiment 3

[0069] Test sample: ITO transparent electrode (thickness is 500nm), electron transport layer (titanium dioxide, thickness is 40nm), perovskite light absorbing layer (thickness is 500nm), hole transport layer (Spiro- OMeTAD with a thickness of 150nm) and an entire metal electrode (silver), using a laser to form openings in the entire metal electrode and the entire hole transport layer, the thickness of the hole transport layer at the bottom of the opening is 0.1nm or 50nm, and then formed Encapsulation layer and glass backplane to obtain test samples, the structure diagram can refer to figure 2 . A series of solar cells with different opening area ratios were fabricated by the above method.

[0070] Test method: simulate and calculate the resistance power loss and absolute efficiency gain of the above series of solar cells according to the conventional basic logic method in the art.

[0071] Figure 11 The resulting plot of resistive power loss as a function of the fraction...

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Abstract

The invention provides a thin-film solar cell and a preparation method thereof. The thin-film solar cell includes a transparent electrode, a perovskite light-absorbing layer, a hole transport layer and a metal electrode stacked in sequence, wherein the metal electrode has a plurality of openings arranged at intervals , the opening penetrates the metal electrode and the bottom of the opening extends into the hole transport layer. In the battery, double-sided power generation can be realized by setting openings, and the light absorption of the hole transport layer can be suppressed without causing obvious resistive loss, thereby improving the utilization rate of sunlight and improving the energy conversion efficiency of the battery.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a thin film solar cell and a preparation method thereof. Background technique [0002] At present, perovskite solar cells have attracted wide attention as a new type of high-efficiency thin-film solar cells. The light-absorbing layer is a thin-film light-absorbing layer, which can be easily prepared by solution coating, and most of the processes in the production process can be Under low temperature conditions, flexible perovskite batteries can be prepared. In addition, it is reported that its energy conversion efficiency can be higher than 20%, but the current energy conversion efficiency of solar cells is still low. In order to further improve the energy conversion efficiency of cells, researchers propose a double-sided solar cell that simultaneously absorbs sunlight on both sides of the solar cell. , the current research on bifacial solar cells is mainly focused on crysta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/44H01L51/48
CPCY02E10/549
Inventor 沈承焕
Owner WUXI UTMOST LIGHT TECH CO LTD
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