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Thin film crystalline silicon perovskite heterojunction solar cell and preparation method thereof

A solar cell, perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as photoelectric conversion performance degradation

Inactive Publication Date: 2020-10-20
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is: the present invention provides a thin-film crystalline silicon perovskite heterojunction solar cell with a new structure and its preparation method, which is a thin-film crystalline silicon perovskite heterojunction solar cell with an electron blocking structure layer The junction solar cell and the preparation method thereof overcome the problem that the photogenerated free electrons of the thin-film crystalline silicon perovskite heterojunction solar cell in the prior art enter the interior of the P-type crystalline silicon hole transport layer and recombine with holes, resulting in a decrease in photoelectric conversion performance. At the same time, it can also reduce the PN junction leakage current formed macroscopically due to the significant electron-hole recombination on the PN junction interface due to the large number of surface states in the P-type thin film crystalline silicon layer, thus improving the photoelectric performance of the battery and maintaining Environmental protection, low cost characteristics

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  • Thin film crystalline silicon perovskite heterojunction solar cell and preparation method thereof

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Embodiment 1

[0064] A thin-film crystalline silicon perovskite heterojunction solar cell with an electron-blocking structure layer consists of a transparent conductive substrate, a P-type thin-film crystalline silicon hole transport layer, an electron-blocking structure layer, a perovskite light-absorbing layer, and a dense titanium dioxide. The electron blocking structure layer is between the P-type crystalline silicon thin film layer and the perovskite light absorbing layer, and is composed of P-type thin-film nickel oxide; its composition sequence is: P-type thin-film crystalline silicon space The hole transport layer is placed on the transparent conductive substrate, the electron blocking structure layer is placed on the P-type thin film crystalline silicon hole transport layer, the perovskite light absorbing layer is placed on the electron blocking structure layer, and the electron blocking layer composed of dense titanium dioxide The transport layer is placed on the perovskite light-a...

Embodiment 2

[0090] A thin-film crystalline silicon perovskite heterojunction solar cell with an electron-blocking structure layer consists of a transparent conductive substrate, a P-type thin-film crystalline silicon hole transport layer, an electron-blocking structure layer, a perovskite light-absorbing layer, and a dense titanium dioxide. The electron blocking structure layer is composed of a P-type nickel oxide film between the P-type crystalline silicon thin film layer and the perovskite light-absorbing layer; its composition sequence is: P-type thin-film crystalline silicon space The hole transport layer is placed on the transparent conductive substrate, the electron blocking structure layer is placed on the P-type thin film crystalline silicon hole transport layer, the perovskite light absorbing layer is placed on the electron blocking structure layer, and the electron blocking layer composed of dense titanium dioxide The transport layer is placed on the perovskite light-absorbing la...

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Abstract

The invention discloses a thin film crystalline silicon perovskite heterojunction solar cell and a preparation method thereof, and relates to a semiconductor device specially suitable for converting light energy into electric energy. The thin film crystalline silicon perovskite heterojunction solar cell is provided with an electron blocking structure layer. The perovskite solar cell is composed ofa transparent conductive substrate, a P-type thin film crystalline silicon layer, an electron blocking structure layer, a perovskite light absorption layer, an electron transmission layer composed ofcompact titanium dioxide and a back electrode, and the electron blocking structure layer composed of P-type nickel oxide is added between the P-type crystalline silicon thin film layer and the perovskite light absorption layer. And the perovskite light absorption layer and the electron blocking structure layer have matched energy levels. The thin film crystalline silicon perovskite heterojunctionsolar cell overcomes the defects of leakage current and internal short circuit possibly existing in the thin-film crystalline silicon perovskite heterojunction solar cell in the prior art, and can also play a role in protecting an interface.

Description

technical field [0001] The technical solution of the invention relates to a semiconductor device specially suitable for converting light energy into electric energy, specifically a perovskite heterojunction solar cell and a preparation method thereof. Background technique [0002] Among the various existing new energy technologies, photovoltaic power generation is undoubtedly one of the most promising directions. Solar energy has the advantages of green sustainability, wide range of sources, safety and stability, and is expected to become a new alternative energy source for traditional fossil fuels. The thin-film crystalline silicon perovskite heterojunction solar cell composed of thin-film crystalline silicon and perovskite not only overcomes the stability that may occur in ordinary perovskite solar cells due to the use of organic hole transport materials, which is difficult to meet outdoor stable operation. Ten years of requirements and the shortcomings of high cost of or...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K71/12H10K30/353H10K30/82Y02E10/549
Inventor 田汉民常卫洪方国川
Owner HEBEI UNIV OF TECH