Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method and application of 3D printing silicon oxynitride ink without organic deposition phase

A 3D printing, silicon oxynitride technology, applied in the direction of additive processing, can solve problems such as deformation, cracking, leaving pores, etc., to achieve the effect of simple preparation process, inhibition of viscosity increase, and avoidance of pores

Active Publication Date: 2021-07-13
HARBIN INST OF TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem that the existing 3D printing ink contains a large amount of organic deposition phases, defects such as pores, deformation or cracks will be left inside the ceramic body after debinding, and a 3D printing silicon oxynitride ink without organic deposition phases is proposed. The preparation method and its application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and application of 3D printing silicon oxynitride ink without organic deposition phase
  • Preparation method and application of 3D printing silicon oxynitride ink without organic deposition phase
  • Preparation method and application of 3D printing silicon oxynitride ink without organic deposition phase

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0022] Specific Embodiment 1: In this embodiment, the preparation method of 3D printing silicon oxynitride ink without organic deposition phase is carried out according to the following steps:

[0023] 1. Mix silicon nitride, silicon dioxide and sintering aids to obtain mixed raw materials, then ball mill the mixed raw materials, dry them after ball milling, and finally obtain mixed powder after screening;

[0024] 2. Add tetraethylene glycol dimethyl ether and n-hexanol to the mixed powder in step 1 and mix to obtain a solid-liquid mixture;

[0025] The volume fraction of the mixed powder in the solid-liquid mixture described in step 2 is 21.50-21.80 vol%, the volume fraction of tetraethylene glycol dimethyl ether is 69.15-69.35 vol%, and n-hexanol is the balance;

[0026] 3. Mechanically stir the solid-liquid mixture obtained in step 2 for 0.5 to 1 hour to obtain uniformly mixed ink, which is completed; in step 3, mechanical stirring can make the solid-liquid mixture evenly ...

specific Embodiment approach 2

[0030] Specific embodiment two: the difference between this embodiment and specific embodiment one is: the ball milling process described in step one is: the corundum ball and the mixed raw material are loaded into the ball milling tank according to the mass ratio of the ball to material (4~8):1, and Anhydrous ethanol is added into the ball mill tank as a medium, and then the ball mill is not less than 12 hours under the condition that the speed of the mixer is 100-300 rpm. Other steps and parameters are the same as those in the first embodiment. The ball milling process in this embodiment can ensure uniform mixing of raw material powders.

specific Embodiment approach 3

[0031] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the drying process in Step 1 is: stirring and evaporating to dryness in a water bath at 80-90°C. Other steps and parameters are the same as those in Embodiment 1 or 2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method and application of 3D printing silicon oxynitride ink without organic deposition phase, and relates to a preparation method and application of 3D printing silicon oxynitride ink. In order to solve the problem that the existing 3D printing ink contains a large amount of organic deposition phase, defects such as pores, deformation or cracking will be left inside the ceramic body after debinding. Preparation: Mix silicon nitride, silicon dioxide and sintering aids, ball mill, dry and screen to obtain mixed powder, then add tetraethylene glycol dimethyl ether and n-hexanol, stir mechanically, and complete. The application of the above-mentioned non-organic deposition phase 3D printing silicon oxynitride ink in the preparation of ceramic components by 3D printing. The tetradiglycol dimethyl ether and n-hexanol in the organic deposition phase-free 3D printing silicon oxynitride ink of the present invention can be removed only by curing and drying, and no degumming treatment is required, so as to avoid the inner part of the ceramic body after degumming of the ceramic body generation of defects. The present invention is suitable for the preparation and application of 3D printing silicon oxynitride ink.

Description

technical field [0001] The invention relates to a preparation method and application of 3D printing silicon oxynitride ink. Background technique [0002] Si 2 N 2 O ceramics have excellent mechanical properties, thermal shock resistance, oxidation resistance and radiation resistance, and have good application prospects in high-temperature and high-pressure extreme environments such as aerospace and nuclear energy fields. However, the characteristics of high strength and high hardness severely restrict Si 2 N 2 O The processing efficiency of ceramic components increases the processing cost, and it is difficult to obtain components with various sizes and complex structures. The moldless direct writing 3D printing technology is a method of using a computer to carry out three-dimensional modeling, layering processing, and forming components through layer-by-layer accumulation of materials; this method can obtain personalized customized parts with high efficiency, low cost, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/597C04B35/622C04B35/626B33Y70/10B33Y10/00
Inventor 杨治华金海泽贾德昌钟晶蔡德龙李海亮
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com