Method for forming fin field effect transistor (finfet) device structure

Abstract

A method for forming a FinFET device structure is provided. The method includes forming a gate structure over a fin structure. The method also includes forming an S / D contact structure over a S / D structure and depositing a protection layer over the S / D contact structure. The portion layer and the S / D contact structure are made of different materials. The method further includes forming an etchingstop layer over the protection layer and forming a dielectric layer over the etching stop layer. The method includes forming a first recess through the dielectric layer and the etching stop layer to expose the protection layer and forming an S / D conductive plug in the first recess. The S / D conductive plug includes a barrier layer directly on the protection layer, and the protection layer and the barrier layer are made of different materials.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor manufacturing technology, and in particular to the structure of a fin field effect transistor device and its manufacturing method. Background technique [0002] Semiconductor devices are used in various electronic applications such as personal computers, mobile phones, digital cameras, and other electronic equipment. Usually by sequentially depositing insulating or dielectric layer, conductive layer and semiconductor layer material on the semiconductor substrate, and using lithography (lithography) to pattern the various material layers to form circuit components and components on the semiconductor substrate. A semiconductor device is manufactured. Many integrated circuits are typically fabricated on a single semiconductor wafer, and individual dies on the wafer are singulated by sawing along scribe lines between the integrated circuits. Individual chips are typically packaged separately, s...

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Problems solved by technology

[0004] While existing FinFET devices and methods of fabricating FinFET devices are generally adequate for their intended purposes, they have not been completely satisfactory in all respects

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