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High-voltage light-emitting diode chip and manufacturing method thereof

A production method and high-voltage light-emitting technology, which are applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as easy breakage of connecting electrodes and affecting the reliability of high-voltage LED chips

Active Publication Date: 2021-03-05
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The embodiment of the present invention provides a high-voltage light-emitting diode chip and a manufacturing method thereof, which can solve the problem in the prior art that the connection electrodes on the vertical end surface are too thin and are easily broken, which affects the reliability of the high-voltage LED chip.

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  • High-voltage light-emitting diode chip and manufacturing method thereof
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  • High-voltage light-emitting diode chip and manufacturing method thereof

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Embodiment Construction

[0044] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0045] An embodiment of the present invention provides a method for manufacturing a high-voltage light-emitting diode chip. figure 1 It is a flowchart of a method for manufacturing a high-voltage light-emitting diode chip provided by an embodiment of the present invention. seefigure 1 , the production method includes:

[0046] Step 101: sequentially growing an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate.

[0047] figure 2 The front view of the high-voltage light-emitting diode chip obtained after step 101 of the manufacturing method provided by the embodiment of the present invention, image 3 A top view of the high-voltage light-emitting diode chip obtained after step 101 in the manu...

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Abstract

The invention discloses a high-voltage light-emitting diode chip and a manufacturing method thereof, belonging to the technical field of semiconductors. The method includes: sequentially growing an N-type semiconductor layer, an active layer, and a P-type semiconductor layer on a substrate; opening a first groove extending to the N-type semiconductor layer on the P-type semiconductor layer; opening and extending to the N-type semiconductor layer. to the second groove of the substrate; an insulating layer is laid on the N-type semiconductor layer and the P-type semiconductor layer in the second groove and around the second groove; silicon boron oxide is deposited on the insulating layer and softened by heating to form The step relief layer, the angle between the connection end surface of the upper surface of the step relief layer and the lower horizontal end surface is an obtuse angle; a connection electrode is set on the step relief layer, one end of the connection electrode extends to the N-type semiconductor layer, and the other end of the connection electrode One end extends to the P-type semiconductor layer, and an N-type electrode is arranged on the N-type semiconductor layer, and a P-type electrode is arranged on the P-type semiconductor layer. The invention can improve the reliability of the chip.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high-voltage light-emitting diode chip and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) as a new generation of high-efficiency and green solid-state lighting sources, since the gallium nitride (GaN)-based LED was successfully developed by Japanese scientists in the 1990s, its technology has continued to improve , the luminous brightness is continuously improved, and the application fields are becoming wider and wider. LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, etc., and is rapidly and widely used in traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, outdoor full-color display screen and other fields. Especially in the field of lighting, LED occupies more than...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/00H01L33/06H01L33/14H01L33/46
Inventor 兰叶顾小云吴志浩
Owner HC SEMITEK ZHEJIANG CO LTD