A kind of terahertz vacuum triode and its manufacturing method
A technology of vacuum triode and manufacturing method, which is applied in the field of optoelectronics, and can solve problems such as sparking, complex process of field emission triode, and damage of triode
Active Publication Date: 2021-11-12
BEIHANG UNIV +1
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Problems solved by technology
Although field emission triode technology has made some progress, the process of field emission triode is complicated and it is difficult to manufacture on a large scale; in addition, field emission triode requires a high electric field when it is working, and it is easy to spark between the cathode and anode. Phenomenon, resulting in damage to the triode, affecting the service life of the triode
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[0042] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the present invention Examples, not all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0043] The exploration and research of terahertz spectrum resources and the development and application of terahertz science and technology have always been restricted by the performance of terahertz sources and detectors. Vacuum electronics has been an important technological route to provide high power sources. Vacuum microelectronic devices can enable electrons to achieve bal...
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Abstract
The embodiment of the invention discloses a terahertz vacuum triode and a manufacturing method thereof. Wherein, the terahertz vacuum triode includes an anode, a vacuum channel layer, and a photocathode, and the vacuum channel layer includes a first insulating material layer, a gate control electrode, and a second insulating material layer, and a vacuum channel is set in the vacuum channel layer, and the vacuum channel penetrates A first insulating material layer, a gate control electrode and a second insulating material layer, the gate control electrode is arranged between the first insulating material layer and the second insulating material layer, and the photocathode and the anode are arranged At both ends of the vacuum channel, the first insulating material layer is arranged between the gate control electrode and the anode, and the second insulating material layer is arranged between the gate control electrode and the photocathode, A sealed cavity is formed between the photocathode, the vacuum channel layer and the anode. The terahertz vacuum triode and the manufacturing method thereof provided by the embodiments of the present invention prolong the service life of the terahertz vacuum triode.
Description
technical field [0001] Embodiments of the present invention relate to the field of optoelectronic technology, and in particular to a terahertz vacuum triode and a manufacturing method thereof. Background technique [0002] In 2014, NASA Ames Research Center (NASA Ames Research Center) carried out a lot of research work on vacuum nano-transistors, proposed an air channel transistor with a planar insulating layer isolation gate structure and carried out physical verification, and produced a vacuum field effect Transistor (VFET) and Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Through the comparison of the relationship between the VFET gate voltage and the anode voltage and the relationship between the drain current of the MOSFET and the gate voltage and the drain voltage, it can be seen that its operating characteristics are very consistent with those of semiconductor transistors. Although the field emission triode technology has made some progress, the process...
Claims
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IPC IPC(8): H01J21/10H01J21/20H01J9/12H01J19/54
Inventor 阮存军戴军徐向晏刘虎林丁一坤
Owner BEIHANG UNIV