A kind of gan-based light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a GaN-based light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of light-emitting diodes. The epitaxial wafer includes a sapphire substrate, and a buffer layer, an undoped GaN layer, an N-type layer, an active layer and a P-type layer which are deposited in order on the sapphire substrate. The active layer comprises a plurality of stacked well barrier layers, each well barrier layer comprises a quantum well layer and quantum barrier layer, the quantum well layers in the well barrier layers close to the N-type layer are in contact with the N-type layer, the quantum barrier layers in the well barrier layers close to the P-type layer are in contact with the P-type layer, the quantum well layers are InGaN quantum well layers, and the quantum barrier layers are a periodic structure with alternate growth of BGaN layers and InGaN layers.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a GaN-based light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] GaN (Gallium Nitride) is a typical representative of the third-generation wide-bandgap semiconductor materials. It has excellent high thermal conductivity, high temperature resistance, acid and alkali resistance, and high hardness. It is widely used in the production of blue, green, and ultraviolet led. GaN-based light emitting diodes generally include an epitaxial wafer and electrodes disposed on the epitaxial wafer. [0003] An existing epitaxial wafer of a GaN-based light-emitting diode includes a substrate and a GaN epitaxial layer grown on the substrate. The GaN epitaxial layer includes a sequentially stacked buffer layer, an undoped GaN layer, an N-type layer, an active layer (also known as a multi-quantum well layer) and a P-type layer. Among th...

AI Technical Summary

Problems solved by technology

[0004] In the process of realizing the present invention, the inventors found that the prior art has at least the following problems: GaN material has a large spontaneous polarization, and the heterostructure formed in GaN material has a strong piezoelectric polarization effect

The piezoelectric field will cause the quantum confinement Stark effect, and the quantum confinement Stark effect will reduce the recombination efficiency of electrons and holes in the active layer, thereby affecting the internal quantum efficiency of the LED

Images