A completely asymmetric subthreshold single-ended nine-tube storage unit

Abstract

The invention discloses a completely asymmetric sub-threshold single-ended nine-tube storage unit, which comprises a bit line, an inverted phase line, a word reading line, a writing line and a P-N-N type inverter, a P-P-N type inverter, and a read-write selection circuit. The P-N-N type phase inverter comprises a first MOS transistor, a second MOS transistor and a third MOS transistor, the first MOS transistor is a P-type MOS transistor, the second MOS transistor and the third MOS transistor are both N-type MOS transistors, the P-P-N type inverter comprises a fourth MOS tube, a fifth MOS transistor and a sixth NMOS transistor, wherein the fourth MOS transistor and the fifth MOS transistor are both P-type MOS transistors, the sixth MOS transistor is an N-type MOS transistor, the read-writeselection circuit comprises a seventh NMOS transistor, an eighth MOS transistor and a ninth MOS transistor, and the seventh MOS transistor, the eighth MOS transistor and the ninth MOS transistor are all N-type MOS transistors. The method has the advantages that the read-write noise tolerance is high, noise interference is not prone to occurring, and the stability is high.

Description

technical field [0001] The invention relates to a storage unit, in particular to a completely asymmetric sub-threshold single-end 9-tube storage unit. Background technique [0002] With the continuous development of process technology, the size of transistors is getting smaller and smaller, so that the number of transistors integrated on a chip is increasing. As the main component of the processor and SoC (System on Chip, System on Chip), the memory usually occupies more than half of the transistors in the entire chip. It can be said that the memory dominates the performance and power consumption of the entire chip. In recent years, the memory area has occupied more than 70% of the entire SoC area, and there is a growing trend. [0003] For SoCs used in biomedical, wireless sensing and environmental monitoring, their operating frequency is usually only tens of megahertz (MHz), several megahertz or even hundreds of hertz, and they usually use batteries or passive The device...

AI Technical Summary

Problems solved by technology

[0005] Although the above-mentioned types of memory cells can work at sub-threshold voltages, their minimum operating voltages are all around the threshold voltage, and they need read / write auxiliary circuits to help. Once the read / write auxiliary circuits are lost, They are easily disturbed by noise, causing read / write failures

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