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SRAM and its layout and access method

A static random access and memory technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as poor performance of static random access memory, improve write noise tolerance, increase read noise tolerance, and improve stability Effect

Active Publication Date: 2018-08-10
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Poor Performance of Existing Complementary Metal Oxide Semiconductor SRAM

Method used

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  • SRAM and its layout and access method
  • SRAM and its layout and access method
  • SRAM and its layout and access method

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] As mentioned in the background, the existing SRAM has poor performance. The (bit cell plane) layout of the existing SRAM is as follows figure 1 shown. It includes six transistors (none of which are labeled), figure 1 The floor plan shown shows the active regions (not labeled) and gates of six transistors. Usually SRAM includes a first drive transistor, a first load transistor, a second drive transistor and a second load transistor, by figure 1 It can be seen that the SRAM is located in the area surrounded by the rectangular dotted frame.

[0049] It should be noted that, for clarity of labeling, in each drawing of this specification, when labeling each gate, the lead wire is led out from one of the positions of the gate layer. However, those skilled in the art should understand that the gate layers above different active regions are different gates, that is, each gate is actually a part of the gate layer. For example figure 1 Among them, the gate D11 and the gate ...

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PUM

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Abstract

The invention relates to a static random access memory, and a layout method and an access method thereof. The static random access memory comprises: a first inverter having a first driver transistor and a first load transistor; a second inverter having a second driver transistor and a second load transistor; a first pass transistor connected to the output end of the first inverter; a second pass transistor connected to the output end of the second inverter; at least one first auxiliary driver transistor; at least one second auxiliary driver transistor; at least one first auxiliary pass transistor connected to the output end of the first inverter, wherein the grid of the first auxiliary pass transistor is separated from the grid of the first pass transistor; and at least one second auxiliary pass transistor connected to the output end of the second inverter, wherein the grid of the second auxiliary pass transistor is separated from the grid of the second pass transistor. The stability of the static random access memory is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a static random access memory and its layout and access method. Background technique [0002] Prior Art Among semiconductor memory devices, Static Random Access Memory (SRAM) devices have the advantages of lower power consumption and faster operating speed than Dynamic Random Access Memory (DRAM) devices. The SRAM can easily locate the physical unit through the bitmap test equipment to study the effective mode of the product. [0003] SRAM can be divided into resistive load SRAM and complementary metal oxide semiconductor (CMOS) SRAM. Resistive load SRAM cells use high-resistance resistors as load devices, while complementary metal-oxide-semiconductor SRAM cells use P-channel metal-oxide-semiconductor (PMOS) transistors as load devices. The CMOS SRAM includes a plurality of NMOS transistors and PMOS transistors. [0004] Existing CMOS SRAMs have poor performance. C...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/413
Inventor 张弓王楠
Owner SEMICON MFG INT (SHANGHAI) CORP