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Hot-line type gas sensor chip, sensor and preparation method for sensor

A gas sensor and hot wire technology, applied in the direction of material resistance, etc., can solve the problems of high sensor power consumption, low product yield, low degree of automation, etc., and achieve the effect of stable signal value

Pending Publication Date: 2019-06-25
SUZHOU NANOGRID TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the hot-wire semiconductor gas sensor is basically prepared by hand, and the degree of automation is not high, resulting in low product yield, poor consistency, and high power consumption of the sensor, which limits the development and popularization of this type of sensor.

Method used

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  • Hot-line type gas sensor chip, sensor and preparation method for sensor
  • Hot-line type gas sensor chip, sensor and preparation method for sensor
  • Hot-line type gas sensor chip, sensor and preparation method for sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] Provide a double-sided polished double-sided oxidized 4-inch monocrystalline silicon wafer with 100 crystal orientation, then ultrasonically clean it with acetone for 15 minutes, then ultrasonically clean it with isopropanol for 5 minutes, then clean it with deionized water for 5 minutes, and blow it with nitrogen Dry; select conductive metal oxide powder of appropriate specifications, add organic carrier, prepare heating resistance film slurry, print a square heating resistance film with a length and width of 300um×300um on the wafer by screen printing, and Dry at 120°C for 10 minutes; then print the conductive paste on the wafer and dry at 120°C for 10 minutes; put the dried wafer in a muffle furnace and sinter at 1000°C for 30 minutes to obtain a 10um Thick heating resistor film and electrode electrodes, and the resistance value of the heating resistor film is 100Ω;

[0082] Spin-coat positive photoresist on the front and back of the substrate, dry and cure at 100°C ...

Embodiment 2

[0085] Provide a 6-inch single-crystal silicon wafer with double-sided polishing and oxidation, with 100 crystal orientations, and then ultrasonically clean it with acetone for 10 minutes, then ultrasonically clean it with isopropanol for 10 minutes, then clean it with deionized water for 5 minutes, and blow it with nitrogen Dry;

[0086] Select conductive metal oxide powder of appropriate specifications, add organic carrier, prepare heating resistance film slurry, and print a rectangular heating resistance film with a length and width of 300um×400um on the oxide layer on one side of the wafer by screen printing. And dry at 100°C for 10min; then print the conductive paste on the wafer and dry at 100°C for 10min;

[0087] Put the dried wafer into a muffle furnace and sinter at 1200°C for 20 minutes to obtain a 20um thick heating resistor film and electrode electrodes, and the resistance value of the heating resistor film is 80Ω;

[0088] Spin-coat positive photoresist on the f...

Embodiment 3

[0091] Provide a 2-inch monocrystalline silicon wafer with both sides polished and double sides oxidized, with 100 crystal orientation, and then ultrasonically clean it with acetone for 10 minutes, then ultrasonically clean it with isopropanol for 10 minutes, then clean it with deionized water for 5 minutes, and blow it with nitrogen Dry; select conductive metal oxide powder of appropriate specifications, add organic carrier, prepare heating resistance film slurry, print a square heating resistance film with a length and width of 400um×400um on the wafer, and Dry at 100°C for 10 minutes; then print the conductive paste on the wafer and dry at 150°C for 10 minutes; put the dried wafer into a muffle furnace and sinter at 1100°C for 30 minutes to obtain a thickness of 15um The heating resistance film and the electrode electrode, and the resistance value of the heating resistance film is 60Ω;

[0092] Spin-coat the positive photoresist on the front and back of the substrate, dry i...

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Abstract

The invention provides a hot-line type gas sensor chip, and the chip comprises a silicon substrate comprising a first surface and a second surface which are oppositely arranged, wherein the silicon substrate comprises a central heating area and a peripheral supporting area, and the central heating area comprises an air heat insulation cavity penetrating through the first surface and the second surface; a heating resistance film which is arranged on the first surface; a heating electrode which is arranged on the first surface and partially covers the heating resistance film; and a functional layer which is arranged above the heating resistance film and located in the central heating area, wherein the functional layer is a gas sensitive layer or an environment compensation layer. The invention discloses the hot-line type gas sensor chip, a sensor and a manufacturing method for the sensor. According to the invention, the heating electrode, the heating resistance film and the functional layer are arranged on the silicon substrate, and the functional layer is arranged to be the gas sensitive layer or the environment compensation layer, so that the hot-line type sensor chip with different functional layers can be manufactured, and the hot-line type gas sensor chip can be industrially manufactured.

Description

technical field [0001] The invention relates to the technical field of electronic device manufacturing, in particular to a hot-wire gas sensor chip, a sensor and a preparation method thereof. Background technique [0002] At present, there are many kinds of gas sensors with a wide range of applications. Among them, the hot wire gas sensor is composed of a detection element and a compensation element, and the semiconductor metal oxide is used as the sensitive material, which retains the advantages of high sensitivity of the traditional semiconductor metal oxide. The environment temperature and humidity changes are compensated, so that the gas sensor has better stability of the environment temperature and humidity. [0003] At present, the hot wire semiconductor gas sensor is basically prepared by hand. The main process is: the platinum wire is manually wound into a micro-coil of a specific length, and then the gas-sensitive material and the gas-insensitive material are manual...

Claims

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Application Information

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IPC IPC(8): G01N27/12
CPCG01N27/12
Inventor 崔铮张克栋刘福星余飞陈晓越袁伟李亚邦常晓远
Owner SUZHOU NANOGRID TECH