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Optical proximity correction method and mask manufacturing method

A technology of optical proximity correction and mask plate, which is applied in the direction of optics, originals for photomechanical processing, photoplate making process of pattern surface, etc., can solve the problem of low efficiency, achieve the goal of improving computing efficiency and reducing computing time Effect

Active Publication Date: 2019-07-12
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005]However, the efficiency of optical proximity correction in the prior art is low

Method used

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  • Optical proximity correction method and mask manufacturing method
  • Optical proximity correction method and mask manufacturing method
  • Optical proximity correction method and mask manufacturing method

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Experimental program
Comparison scheme
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Embodiment Construction

[0022] As mentioned in the background, existing optical proximity correction methods are inefficient.

[0023] An optical proximity correction method, comprising: providing a target figure, the target figure comprising a plurality of sub-target figures; dividing each side of the sub-target figure into a plurality of divided sides; performing OPC correction on the divided sides to obtain the corrected side; obtaining the corrected side The edge placement error of ; if the edge placement error is greater than the threshold, the graph formed by the corrected edge is taken as the target graph and the above process is repeated until the edge placement error is smaller than the threshold.

[0024] In one case, for the convenience of illustration, the split edge is divided into a first type split edge and a second type split edge, and the correction accuracy requirement for the first type split edge is higher than that for the second type split edge. In order to meet the requirement ...

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PUM

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Abstract

The invention provides an optical proximity correction method and a mask manufacturing method. The correction method comprises a step of performing a first OPC correction on a first type segmentationedge and a second type segmentation edge to obtain a first type initial correction edge and a second type correction edge, a step of performing second OPC correction on the first type initial correction edge according to an initial edge placement error to obtain a first type correction edge, a step of obtaining a first edge placement error of the first type correction edge and a second edge placement error of the second type correction edge, and a step of taking a graph formed by the first type correction edge and the second type correction edge as a target graph and repeating a process of dividing each edge of a sub target graph into multiple split edges and obtaining the first edge placement error and the second edge placement error until both the first edge placement error and the second edge placement error are smaller than the second threshold if the first edge placement error is greater than a first threshold or the second edge placement error is greater than a second threshold,wherein the first threshold is smaller than the second threshold. The correction efficiency is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an optical proximity correction method and a method for making a mask. Background technique [0002] Photolithography technology is a crucial technology in semiconductor manufacturing technology. Photolithography technology can realize the transfer of graphics from the mask to the surface of the silicon wafer to form semiconductor products that meet the design requirements. The photolithography process includes an exposure step, a development step performed after the exposure step, and an etching step after the development step. In the exposure step, light is irradiated onto the silicon wafer coated with photoresist through the light-transmitting area of ​​the mask, and the photoresist reacts chemically under the irradiation of light; The photoresist is different to the degree of dissolution of the developer, forming a photoresist pattern, and realizing the transfer of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36
CPCG03F1/36
Inventor 覃柳莎
Owner SEMICON MFG INT (SHANGHAI) CORP
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