Array substrate, display panel and display device
A technology of array substrates and substrate substrates, which is applied in semiconductor/solid-state device components, semiconductor/solid-state device testing/measurement, semiconductor devices, etc., to achieve the effect of easy detection and analysis
Active Publication Date: 2021-04-13
HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD +1
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[0003] The invention provides an array substrate, which is used to solve the problem of detecting and analyzing the gate metal layer located in the middle
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[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0028] Please refer to image 3 and Figure 4 ,in, Figure 4 for image 3 From the right side view at A, the present invention provides an array substrate, including: a base substrate; a driving transistor B and a switching transistor formed on the base substrate, and the driving transistor B includes a shielding layer sequentially formed on the base substrate Metal layer 1, gate metal layer 5, insulating layer 6 and source-drain metal layer 7, the gate met...
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This application relates to the technical field of thin film transistor preparation methods, and discloses an array substrate, a display panel and a display device. The array substrate includes: a base substrate; a drive transistor formed on the base substrate, and the drive transistor includes A shielding metal layer, a gate metal layer, an insulating layer, and a source-drain metal layer on the base substrate, the gate metal layer is located between the shielding metal layer and the source-drain metal layer, wherein the The part of the source-drain metal layer used to cooperate with the gate metal layer to form a capacitor is provided with a hollow structure, and the orthographic projection of the hollow structure on the substrate is located on the substrate of the gate metal layer. in the orthographic projection of . In the array substrate provided by this application, by providing a hollow structure on the source and drain metal layers, the source and drain metal layers and the gate metal layer can form a light-shielding structure, which ensures the light stability of the thin film transistor and facilitates the detection and detection of the gate metal layer. parse.
Description
technical field [0001] The present application relates to the technical field of preparation methods of thin film transistors, and in particular to an array substrate, a display panel and a display device. Background technique [0002] In the existing thin film transistor manufacturing process, see figure 1 and figure 2 ,in, figure 2 for figure 1 From the right side view at A, the corresponding part of the driving transistor includes: shielding metal layer, buffer layer, active layer, gate insulating layer, gate metal layer, insulating layer and source-drain metal layer. The structure is relatively complex, and the gate metal layer is located between the shielding metal layer and the source-drain metal layer. Due to the material of the metal layer, it is not convenient to detect and analyze the gate metal layer located in the middle. Contents of the invention [0003] The invention provides an array substrate, which is used to solve the problem of detecting and analy...
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IPC IPC(8): H01L27/12H01L23/544
CPCH01L22/30H01L27/1255
Inventor 黄勇潮成军王东方刘军王庆贺程磊磊苏同上胡迎宾张扬闫梁臣
Owner HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD