Three-dimensional longitudinal one-time programming memory

Abstract

The invention provides a three-dimensional longitudinal one-time programming memory (3D-OTPV). The programming memory consists of multiple stacked horizontal address lines, multiple storage wells penetrating through the horizontal address lines, an anti-fusing film layer covering the storage well sidewall, and multiple vertical address lines formed in the storage wells. In a reading cycle, the information stored by all the OTP memory cells electrically coupled to a word line is read.

Description

technical field [0001] The present invention relates to the field of integrated circuit memories, and more particularly to one-time-programmable memories (OTP). Background technique [0002] Three-dimensional one-time programming memory (3D-OTP) is a monolithic semiconductor memory that contains multiple vertically stacked OTP memory cells. The storage elements of 3D-OTP are distributed in three-dimensional space, while the storage elements of traditional planar OTP are distributed on a two-dimensional plane. Compared with traditional OTP, 3D-OTP has the advantages of high storage density and low storage cost. In addition, 3D-OTP data has a long lifespan (>100 years), which is suitable for long-term data storage. [0003] US Patent 5,835,396 (inventor: Guobiao Zhang; date of authorization: November 10, 1998) discloses a 3D-OTP. The 3D-OTP chip contains a substrate and a plurality of OTP storage layers stacked on the circuit layer of the substrate. The transistors on t...

AI Technical Summary

Problems solved by technology

When 3D-OTP H When the storage capacity exceeds 100Gb, the line width of its address line enters 1x nm, which requires the use of high-precision lithography technology (such as multiple exposure technology), which increases the cost of the chip

At the same time, as the number of OTP storage layers increases, planarization will become more and more difficult

Therefore, 3D-OTP H The number of OTP storage tiers is limited

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