Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Nanostructure for selective infrared stealth at different polarization states

A nanostructure and selective technology, applied in the field of infrared detection, can solve the problems of short service life, limited frequency band range, heat accumulation, etc., and achieve the effect of improving the stealth effect and lifespan

Active Publication Date: 2019-08-23
ZHONGBEI UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, low-emissivity infrared stealth coatings have a series of problems such as heat accumulation, limited frequency range, and short service life. Therefore, it is urgent to explore and develop high-performance infrared stealth materials and technologies.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nanostructure for selective infrared stealth at different polarization states
  • Nanostructure for selective infrared stealth at different polarization states
  • Nanostructure for selective infrared stealth at different polarization states

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] This embodiment provides a figure 1 , figure 2 The shown nanostructures with different polarization selective infrared stealth include a micro-channel heat dissipation layer 1, a thermoelectric conversion layer 2 is arranged above the micro-channel heat dissipation layer 1, and an ultra- Black material absorption layer 3, the ultra-black material absorption layer 3 is composed of a plurality of periodically arranged swastika structures 4, so that when polarized light is incident on the ultra-black material absorption layer 3, it can be absorbed and converted into heat energy , because the ultra-black material absorption layer 3 absorbs the polarized light conversion heat energy, there is a temperature difference between the ultra-black material absorption layer 3 and the micro-channel heat dissipation layer 1, so it is arranged between the ultra-black material absorption layer 3 and the micro-channel heat dissipation layer 1 The thermoelectric conversion layer 2 betwe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a nanostructure for selective infrared stealth at different polarization states, comprising a micro-channel heat dissipation layer, a thermoelectric conversion layer is arranged above the micro-channel heat dissipation layer, and a super black material absorption layer is arranged above the thermoelectric conversion layer and composed of a plurality of periodically arranged structures shaped like a Chinese character ''wan''. The nanostructure for selective infrared stealth at different polarization states not only can convert light into heat energy, and then convert the heat energy into electric energy, and convert energy absorbed by infrared into collectable electric energy through light-heat conversion and heat-electricity conversion, so that the electric energycan be directed utilized, improving stealth effect and life of a infrared stealth material, but also can selectively absorb incident light at different polarization states, thereby achieving the stealth effect. The nanostructure for selective infrared stealth at different polarization states can be used as a detection analyzer to identify different polarized light.

Description

technical field [0001] The invention belongs to the technical field of infrared detection, and in particular relates to a nanostructure with selective infrared stealth in different polarization states. Background technique [0002] With the rapid development of electronic information technology and its wide application in the military field, the means of military reconnaissance have achieved high-tech. In the situation where battlefield targets are "hit when found", the advent of infrared imagers has made the once effective visible light and radar stealth technologies face the threat of being cracked. When the atmospheric conditions are good, the airborne infrared search and track system can detect the target at a distance of more than 80km. Therefore, on the basis of visible light and radar band stealth, taking into account infrared is an inevitable trend in the development of full-band stealth technology in the future. [0003] In recent years, the high-precision, intell...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02B5/00H01Q17/00B82Y30/00
CPCB82Y30/00G02B5/003H01Q17/007
Inventor 张志东张斌珍张彦军
Owner ZHONGBEI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com