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Power semiconductor module

A technology of power semiconductors and housings, which is applied in the fields of semiconductor devices, semiconductor/solid-state device components, and electric solid-state devices to achieve the effect of increasing lifespan and improving protection.

Pending Publication Date: 2019-09-20
HITACHI ENERGY SWITZERLAND AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, prior art solutions still offer room for improvement, for example with regard to providing effective measures against negative influences acting on power semiconductor devices and thus with regard to long-life reliability

Method used

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  • Power semiconductor module
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Examples

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Embodiment Construction

[0059] Reference will now be made in detail to an exemplary embodiment, which is illustrated in the drawings. This example is provided by way of explanation and not meant to be limiting. This disclosure is intended to cover further modifications and variations.

[0060] In the following description of the drawings, the same reference numerals denote the same components. In general, only the differences with respect to the various embodiments are described. When several identical items or parts appear in the drawings, not all parts have reference numerals in order to simplify the appearance.

[0061] Figures 1 to 5 A corresponding exemplary embodiment of a power semiconductor module 10 is shown.

[0062] Reference basis figure 1 with 2 In an exemplary embodiment of the present invention, the power semiconductor module 10 comprises a support 12 carrying at least one power semiconductor arrangement 14 (not shown). according to figure 1 , the support 12 includes a base th...

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Abstract

The present invention provides a power semiconductor module (10), comprising a support (12) which carries at least one power semiconductor device (14), wherein the support (12) together with the power semiconductor device (14) is at least partly located in a housing (20), wherein the support (12) and the power semiconductor device (14) are at least partly covered by a sealing material (22), characterized in that additionally to the sealing material (22), a protecting material (24) is provided in the housing (20), wherein the protecting material (24) is formed from silicon gel and wherein the protecting material (24) at least partly covers at least one of the support (12), the power semiconductor device (14) and the sealing material (22).

Description

technical field [0001] The invention relates to a power semiconductor module. The invention relates in particular to a power semiconductor module which exhibits good long-life reliability. Background technique [0002] Power semiconductor modules comprising power semiconductor devices, such as switching power semiconductor devices, are generally known in the art. For certain applications it may be important to protect the power semiconductor device mechanically and / or with respect to environmental factors. [0003] Document DE 11 2012 006 656 T5 describes a semiconductor arrangement. In this regard, a circuit pattern is bonded to the top surface of the ceramic substrate. A cooling body is bonded to the lower surface of the ceramic base. An insulated gate bipolar transistor (IGBT) and a forward converter (FWD) are provided on a circuit pattern. The coating film covers the junction between the ceramic substrate and the circuit pattern, and the junction between the ceramic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/31H01L23/16H01L23/24H01L23/00
CPCH01L23/04H01L23/053H01L23/24H01L23/3135H01L24/72H01L2224/32225H01L2224/48091H01L2224/48227H01L2224/72H01L2224/73265H01L2924/351H01L2224/291H01L24/29H01L24/32H01L2924/181H01L2924/00014H01L2924/00012H01L2924/014H01L23/492H01L24/48
Inventor D.吉永C.帕帕多保罗斯D.特吕塞尔F.菲舍尔S.哈特曼
Owner HITACHI ENERGY SWITZERLAND AG