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Electrode, perovskite light-emitting diode and manufacturing method thereof

A light-emitting diode, perovskite technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of high cathode work function and difficult electron injection.

Active Publication Date: 2021-05-07
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of this application is to provide an electrode, a perovskite light-emitting diode and its manufacturing method to solve the problem that the cathode made of carbon material has a high work function, which makes electrons difficult to inject into the perovskite light-emitting layer.

Method used

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  • Electrode, perovskite light-emitting diode and manufacturing method thereof
  • Electrode, perovskite light-emitting diode and manufacturing method thereof
  • Electrode, perovskite light-emitting diode and manufacturing method thereof

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preparation example Construction

[0046] When graphite and PEIE are used as electrode preparation materials, the quality of graphite remains unchanged. As the mass of PEIE gradually increases, the absolute value of the work function of the electrode decreases gradually, and the sheet resistance of the electrode gradually increases. When the mass of PEIE is 0.01g, the work function of the electrode is -4.48ev, which is not significantly lower than that of the graphite electrode; when the mass of PEIE is 9g, the work function of the electrode is -4.3, and the sheet resistance is 50ohm / sq, although the work function of the electrode is small, the conductivity of the electrode is significantly lower than that of the graphite electrode. When the mass ratio of PEIE to graphite is 0.1-2:100, the balance between the work function and conductivity of the electrode is achieved, which is more conducive to the application of the electrode to light-emitting diodes. In addition, as can be seen from Example 6 and Comparativ...

Embodiment 8

[0050] Such asfigure 1 As shown, it is a schematic diagram of the structure of the perovskite light-emitting diode of this embodiment. The perovskite light emitting diode includes a substrate 100 , an anode 101 , a hole transport layer 102 , a perovskite light emitting layer 103 , an electron transport layer 104 and a cathode 105 . The anode 101 is formed on a surface of the substrate 100, the hole transport layer 102 is formed on a surface of the anode away from the substrate 100, the perovskite light-emitting layer 103 is formed on the surface of the hole transport layer 102 away from the anode 101, and the electron transport layer 104 It is formed on the surface of the perovskite light-emitting layer 103 away from the hole transport layer 102 , and the cathode 105 is formed on the surface of the electron transport layer 104 away from the perovskite light-emitting layer 103 . The composition of the perovskite light-emitting diode is shown in Table 2 below:

[0051] ...

Embodiment 9

[0055] This embodiment is a method for manufacturing a perovskite light-emitting diode shown in Embodiment 8, including the following steps:

[0056] S11: providing a substrate 100 formed with an anode 101 .

[0057] Specifically, a glass substrate with an indium tin oxide layer formed on the surface is provided.

[0058] S12: forming a hole transport layer 102 on a surface of the anode 101.

[0059] Specifically, the glass substrate formed with the indium tin oxide layer was treated with ultraviolet light and ozone, and the PEDOT:PSS aqueous solution was spin-coated on the indium tin oxide layer at a rate of 3000r / min for 1 minute, and the PEDOT:PSS aqueous solution coated with The glass was transferred to a heating stage at 150° C. for annealing treatment for 10 minutes to form a hole transport layer. PEDOT:PSS aqueous solution is commercially available.

[0060] S13: forming a perovskite light emitting layer 103 on the surface of the hole transport layer 102 away from th...

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Abstract

The application provides an electrode, a perovskite light-emitting diode and a manufacturing method thereof, and uses a specific polymer-based surface modifier PEIE and / or PEI to modify a carbon material to obtain an electrode with a low work function, and the electrode is used as a perovskite The cathode of mineral light-emitting diodes is more conducive to electron injection into the perovskite light-emitting layer.

Description

technical field [0001] The present application relates to the technical field of electroluminescent devices, in particular to an electrode, a perovskite light-emitting diode and a manufacturing method thereof. Background technique [0002] At present, the organic-inorganic hybrid perovskite is a kind of molecular formula ABX 3 Type compounds, A represents a monovalent cation, such as CH 3 NH 3 + , NH 2 -CH=NH 2 + 、Cs + etc.; B represents a divalent cation, such as Pb 2+ , Sn 2+ etc.; X represents a monovalent anion, such as I-, Br-, Cl-, etc. ABX 3 Type compounds have properties such as high fluorescence quantum efficiency, narrow half-peak width, high color purity, and adjustable optical bandgap, so they are also very attractive in the field of light-emitting display devices. In particular, as the external quantum efficiency of green and red perovskite light emitting diodes (Light Emitting Diode, LED) breaks through 20% one after another, perovskite light emittin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/52H01L51/56
CPCH10K50/82H10K71/00
Inventor 段淼李佳育徐君哲陈书志江沛何波尹勇明吴永伟
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD