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An actively configured memory reading device, memory and electronic equipment

A technology of reading device and memory, applied in the field of memory and electronic equipment, memory reading device, can solve the problems of delay deviation of inverter chain, change of reading timing of memory storage unit, etc., so as to reduce the impact and reduce the The effect of reading power consumption

Active Publication Date: 2021-11-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, affected by the fluctuation of the integrated circuit process, the delay of the inverter chain will deviate, which will most likely change the read timing of the memory storage unit.

Method used

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  • An actively configured memory reading device, memory and electronic equipment
  • An actively configured memory reading device, memory and electronic equipment
  • An actively configured memory reading device, memory and electronic equipment

Examples

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Embodiment Construction

[0034] Preferred embodiments of the present invention will be specifically described below in conjunction with the accompanying drawings, wherein the accompanying drawings constitute a part of the application and are used together with the embodiments of the present invention to explain the principles of the present invention.

[0035] This embodiment discloses an actively configured memory reading device, such as figure 1 As shown, it includes an actively configured memory read timing generating device, which is used to generate a read timing signal according to the active configuration information, and perform timing control on data reading of the memory storage array Normal Array.

[0036] Specifically, the actively configured memory read timing generating device includes a multi-timing generating module and a timing output module;

[0037] The multi-timing generation module is connected to the read pre-fill control line and the word line of the memory; and, the read pre-fi...

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Abstract

The invention relates to an actively configured memory reading device, a memory and electronic equipment, which belong to the technical field of integrated circuits, and solve the problem of the influence of process fluctuations on reading timing; the memory reading device includes an actively configured memory reading timing generating device, It is used for generating a read timing signal according to active configuration information, and performing timing control on data reading of the memory storage array. The present invention actively configures the read timing to reduce the impact of process fluctuations on the read timing, and makes the read timing approach the time required for reading, and also reduces the read power consumption of the memory.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to an actively configured memory reading device, memory and electronic equipment. Background technique [0002] With the continuous shrinking of the process size of the integrated circuit, the impact of process fluctuation on the reading speed and power consumption of the memory is also increasing. When the traditional memory reads the data of the storage unit, an external input enable signal is required to be transmitted to the enable terminal of the sense amplifier after passing through the inverter chain. However, affected by the fluctuation of the integrated circuit process, the delay of the inverter chain will deviate, which will most likely change the read timing of the memory storage unit. Contents of the invention [0003] In view of the above analysis, the present invention aims to provide an actively configured memory reading device, memory and electronic eq...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/06G11C7/10
CPCG11C7/06G11C7/1051G11C7/1078
Inventor 陈巍巍陈岚尤云霞
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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