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A Modulation Method of Asymmetric Ferroelectric Tunneling Junction Multi-valued Memory Cell

A technology of multi-value storage and modulation method, applied in the direction of electrical components, information storage, static memory, etc., to achieve the effect of simple method, easy process compatibility, and easy integration

Active Publication Date: 2022-08-05
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, MFIM-based memory can only be applied to binary memory, and it is difficult to meet the higher requirements of the future society for information processing capability and information storage capacity.

Method used

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  • A Modulation Method of Asymmetric Ferroelectric Tunneling Junction Multi-valued Memory Cell
  • A Modulation Method of Asymmetric Ferroelectric Tunneling Junction Multi-valued Memory Cell
  • A Modulation Method of Asymmetric Ferroelectric Tunneling Junction Multi-valued Memory Cell

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preparation example Construction

[0075] The present invention provides a method for preparing the above-mentioned multi-valued memory cell with asymmetric ferroelectric tunneling junction, the multi-valued memory cell comprising the above-mentioned multi-value memory cell

[0076] The method includes the following steps:

[0077] Step 1: provide a substrate, and form a first electrode layer 1 on the upper surface of the substrate;

[0078] Step 2: An asymmetric ferroelectric functional layer array 11 is formed on the upper surface of the first electrode layer 1, which includes: N ferroelectric functional layers parallel to the first plane direction, two adjacent ferroelectric functional layers separated by an insulating layer;

[0079] Step 3: forming a second electrode layer 5 on the upper surface of the Nth ferroelectric functional layer;

[0080] Step 4: crystallizing the ferroelectric functional layer, so that the ferroelectric functional layer material exhibits ferroelectric properties;

[0081] In th...

Embodiment

[0106] This embodiment provides a Hf-based 0.5 Zr 0.5 O 2 (hereinafter abbreviated as HZO) ferroelectric thin films and Al 2 O 3 The multi-value memory cell of asymmetric ferroelectric tunneling junction of insulating layer, its structure diagram is as follows figure 1 As shown, from bottom to top, it mainly includes a first electrode layer 1 , a first ferroelectric functional layer 2 , an insulating layer 3 , a second ferroelectric functional layer 4 , and a second electrode layer 5 . Specific steps are as follows:

[0107] (1) Preparation of the first electrode layer 1

[0108] Step 1: Prepare the first electrode layer 1: In the embodiment, TiN is used as the lower electrode 1, and a layer of the lower electrode 1 is grown on a single crystal silicon substrate with SiO2 polished on one side by magnetron sputtering.

[0109] Step 1-1: Substrate cleaning: first use acetone to clean under ultrasonic environment for 10 minutes, then use alcohol to clean under ultrasonic en...

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Abstract

The present invention provides a modulation method of an asymmetric ferroelectric tunnel junction multi-value storage unit and a corresponding storage unit and memory. The multi-value memory cell includes N ferroelectric functional layers; the N ferroelectric functional layers have different coercive field values ​​respectively, so that the N ferroelectric functional layers still exhibit different remanent polarizations after the first excitation is applied difference, and then under the action of the second excitation, the multi-valued storage unit presents 2 N A tunneling resistance state; wherein, N is an integer greater than or equal to 2, and the first excitation includes changing the magnitude and direction of the driving excitation. The asymmetric ferroelectric tunneling junction multi-value storage unit of the present invention has the characteristics of non-volatility and low reading power consumption; at the same time, a variety of different storage states can be realized in one storage unit, which greatly improves the storage density and unit storage.

Description

technical field [0001] The invention belongs to the field of microelectronic devices, and in particular relates to a modulation method of an asymmetric ferroelectric tunneling junction multi-value storage unit and a corresponding storage unit and memory. Background technique [0002] With the advent of the era of big data, the demand for information processing capacity and information storage capacity continues to increase, and the traditional von Neumann computer architecture and memory are increasingly difficult to meet the demand. Ferroelectric materials are used in the storage field due to their inherent advantages such as fast erasing and writing speed, ultra-low power consumption, many cycles, and non-volatile polarization state. New non-volatile materials such as FRAM, FeFET and FTJ based on ferroelectric materials Sexual memory has received a lot of attention. Among them, the FTJ memory modulates the interface barrier height of the insulating layer through the ferro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/1159G11C11/22G11C11/56H10B51/30
CPCG11C11/22G11C11/5657H10B51/30
Inventor 王兴晟余豪王成旭缪向水
Owner HUAZHONG UNIV OF SCI & TECH
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