A non-volatile random access memory data reading circuit, memory and method

Abstract

The invention provides a non-volatile random access memory data reading circuit, memory and method for reading the resistance state of a data storage unit, the data storage unit to be read is in a high resistance state or a low resistance state, and the circuit includes a voltage A difference generation unit and a three-voltage amplifying unit; the voltage difference generation unit is used to form the first reference signal and the second reference signal corresponding to the preset voltage input high-impedance state and low-impedance state data storage unit respectively and to acquire the data to be read The obtained data storage unit corresponds to the resistance signal when the preset voltage is input; the three-voltage amplifying unit is used to form and to-be based on the first reference signal, the second reference signal and the resistance signal By reading the judgment signal corresponding to the resistance state of the data storage unit, the present invention can effectively reduce the read interference, improve the read margin of the non-volatile memory, reduce the read time, and reduce the read power consumption.

Description

technical field [0001] The invention relates to the technical field of nonvolatile random access memory, in particular to a nonvolatile random access memory data reading circuit, memory and method. Background technique [0002] With the development of semiconductor technology, the impact of area and power consumption on traditional random access memory (SRAM and DRAM) is becoming more and more serious. Non-volatile memory is expected to become the next generation of mainstream memory due to its non-volatile, low power consumption, high integration, and high compatibility with complementary metal oxide semiconductor (CMOS) . The current mainstream three types of non-volatile memory are: Spin-Transfer-Torque-Magnetic Random-Access Memory (STT-MRAM for short), Resistive Random-Access Memory (Resistive Random-Access Memory, Abbreviated as RRAM), Phase Change Random-Access Memory (Phase Change Random-Access Memory, abbreviated as PCRAM). All three types of non-volatile memory ...

AI Technical Summary

Problems solved by technology

However, the reference devices formed by multiple series and parallel connections will cause a decrease in the sensitivity margin of the read circuit and reduce the stability of data reading.

In addition, in order to reduce the probability of memory flipping during the read process, the read current used is only tens of microamperes, which will also reduce the stability of the read operation

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