A data reading circuit and storage unit

A technology of data reading and reading unit, which is applied in the field of integrated circuits, can solve the problems of small data reading and reading margin, and achieve the effect of improving the reading margin

Active Publication Date: 2022-07-19
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present invention solves the technical problem of small read margin in the process of data reading

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A data reading circuit and storage unit
  • A data reading circuit and storage unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] In the prior art, excessive current may cause rewriting of data stored in the MRAM, resulting in read disturbance (Read Disturb). Therefore, the requirement for the bias of the bit line voltage of the MRAM cell is high. When the read voltage of the bit line is small, the read current is also small, which will lead to a large read error.

[0025] refer to figure 1 , a circuit structure diagram of an existing data reading circuit is given.

[0026] The existing data reading circuit includes a read unit and a latch voltage comparator. Depend on figure 1 It can be seen that the voltage comparison point V comp Directly connected to the bit line BL of the cell being read. at the voltage comparison point V comp with reference voltage V ref When the input latch voltage comparator is used for comparison, the voltage of the bit line BL will be affected by the current of the cell being read (VDD is the power supply voltage), resulting in the voltage comparison point V comp ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A data reading circuit and a storage unit, the data reading circuit includes: a read unit, a voltage stabilizing unit, a first amplifying unit, a reference unit, a second amplifying unit and a comparing unit; the voltage stabilizing unit is composed of for stabilizing and outputting the current of the read unit to the first amplifying unit; the first amplifying unit for amplifying and outputting the current of the read unit to the comparing unit; the second amplifying unit an amplification unit for amplifying and outputting the reference current to the comparison unit; the comparison unit for a comparison point corresponding to the amplified current of the read unit and the amplified reference current voltage, the comparison point voltage is compared with the reference voltage, and the comparison result is output. With the above solution, the read margin for data reading can be improved.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and particularly relates to a data reading circuit and a storage unit. Background technique [0002] Today, Magnetic Random Access Memory (MRAM) has immeasurably broad prospects. Among them, spin transfer torque magnetic random access memory (Spin Transfer Torque Magnetic Random Access Memory, STT-MRAM) is represented, which has the characteristics of high read and write speed, high density, low power consumption, long data storage time and long life. Since MRAM has resistance variability, it can store data information through its different resistance states. At the same time, due to the limitation of the existing process, the ratio of the resistance values ​​between the high-resistance and low-resistance states of each cell (Cell) in the MRAM is relatively low, which leads to a relatively small window for the readout circuit to distinguish the two states, that is, the read margin s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/26
CPCG11C16/26G11C11/1673G11C11/1655G11C27/024G11C13/004G11C2013/0054G11C13/0026G11C11/1697G11C11/1675
Inventor 汪腾野彭家旭王韬赵子鉴
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap