Nonvolatile random access memory data reading circuit, memory and method

Abstract

The invention provides a nonvolatile random access memory data reading circuit, a memory and a method, which are used for reading a resistance state of a data storage unit. A to-be-read data storage unit is in a high resistance state or a low resistance state, and the circuit comprises a voltage difference generation unit and a three-voltage amplification unit; the voltage difference generation unit is used for forming a first reference signal and a second reference signal corresponding to each other when a preset voltage is inputted into a high-resistance-state data storage unit and a low-resistance-state data storage unit, and acquiring a corresponding resistance-state signal of a to-be-read data storage unit when the preset voltage is input; and the three-voltage amplification unit is used for forming a judgment signal corresponding to the resistance state of a to-be-read data storage unit based on the first reference signal, the second reference signal and the resistance state signal. According to the invention, the reading interference can be effectively reduced, at the same time, the reading margin of the nonvolatile memory is improved, the reading time is reduced, and the reading power consumption is reduced.

Description

technical field [0001] The invention relates to the technical field of nonvolatile random access memory, in particular to a nonvolatile random access memory data reading circuit, memory and method. Background technique [0002] With the development of semiconductor technology, the impact of area and power consumption on traditional random access memory (SRAM and DRAM) is becoming more and more serious. Non-volatile memory is expected to become the next generation of mainstream memory due to its non-volatile, low power consumption, high integration, and high compatibility with complementary metal oxide semiconductor (CMOS) . The current mainstream three types of non-volatile memory are: Spin-Transfer-Torque-Magnetic Random-Access Memory (STT-MRAM for short), Resistive Random-Access Memory (Resistive Random-Access Memory, Abbreviated as RRAM), Phase Change Random-Access Memory (Phase Change Random-Access Memory, abbreviated as PCRAM). All three types of non-volatile memory ...

AI Technical Summary

Problems solved by technology

However, the reference devices formed by multiple series and parallel connections will cause a decrease in the sensitivity margin of the read circuit and reduce the stability of data reading.

In addition, in order to reduce the probability of memory flipping during the read process, the read current used is only tens of microamperes, which will also reduce the stability of the read operation

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