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A dual-passband millimeter-wave substrate integrated waveguide filter

A substrate-integrated waveguide and filter technology, applied in the field of communication, can solve problems such as poor out-of-band rejection, large circuit area, and low degree of design freedom, and achieve reduced circuit area, reduced insertion loss, and improved out-of-band rejection Effect

Active Publication Date: 2020-11-17
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional dual-passband millimeter-wave filters generally use multimode technology and two single-passband filters in parallel, but existing millimeter-wave dual-passband filters have large circuit area, poor out-of-band rejection, and low degree of design freedom. question

Method used

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  • A dual-passband millimeter-wave substrate integrated waveguide filter
  • A dual-passband millimeter-wave substrate integrated waveguide filter
  • A dual-passband millimeter-wave substrate integrated waveguide filter

Examples

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Embodiment Construction

[0029] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present invention and implement it, but the examples given are not intended to limit the present invention.

[0030] like Figure 1-3 As shown, it is a dual-pass band millimeter-wave substrate integrated waveguide filter in an embodiment of the present invention, and the filter includes:

[0031] A top dielectric layer 2, the upper surface of the top dielectric layer 2 is provided with a top metal layer 1;

[0032] The bottom dielectric layer 4, the bottom surface of the bottom dielectric layer 4 is provided with a bottom metal layer 5;

[0033] The middle adhesive layer 3 is arranged between the top dielectric layer 2 and the bottom dielectric layer 4;

[0034] The metallized via array 6, the metallized via array 6 runs through the top metal layer 1, the top dielectric layer 2, the mid...

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PUM

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Abstract

The invention discloses a double-passband millimeter wave substrate integrated waveguide filter. The filter comprises a top dielectric layer with a top metal layer on the upper surface, a bottom dielectric layer with a bottom metal layer on the lower surface, a middle bonding layer arranged between the top dielectric layer and the bottom dielectric layer, a metallized through hole array which penetrates through the top metal layer, the top dielectric layer, the middle bonding layer, the bottom dielectric layer and the bottom metal layer and defines a substrate integrated waveguide resonant cavity together with the top metal layer and the bottom metal layer, a pair of input and output feeder lines, a micro-strip resonator and a pair of input and output ports. The double-passband millimeterwave substrate integrated waveguide filter has the advantages of being compact in structure, high in out-of-band rejection, large in design freedom degree and the like.

Description

technical field [0001] The invention relates to the field of communication technology, in particular to a dual-pass band millimeter-wave substrate integrated waveguide filter. Background technique [0002] With the rapid development of wireless communication technology, the communication system working in two or more frequency bands at the same time has become a research hotspot. As a key device in the communication system, multi-band filters have also received extensive attention. In addition, the spectrum resources in the microwave low-frequency band are becoming increasingly tight, and modern communication systems are developing towards the millimeter-wave frequency band. In order to meet the needs of modern communication systems, an effective way is to research and develop high-performance millimeter-wave dual-passband filters. . [0003] At this stage, substrate-integrated waveguide technology is widely used in the design of millimeter-wave filters due to its high qual...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P1/20H01P1/207
CPCH01P1/20H01P1/207
Inventor 郭瑜汪洋张景辉余超毛晓炜
Owner JIANGNAN UNIV