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signal attenuator

A signal attenuation, MOS tube technology, applied in the field of signal processing, can solve problems such as excessive nonlinear voltage, achieve the effect of reducing nonlinear voltage and improving quality

Active Publication Date: 2022-06-24
BEIJING SPREADTRUM HI TECH COMM TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For larger signals, disconnecting the leftmost branch of the attenuator at the maximum attenuation state will generate excessive nonlinear voltage, and eventually cause large distortion of the output signal

Method used

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Embodiment Construction

[0018] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0019] Embodiments of the present invention provide a signal attenuator, such as figure 2 As shown, the signal attenuator includes:

[0020] A plurality of MOS tube branches and a resistance network, the resistance network is composed of the resistance between different MOS tube branches and the resistance between...

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Abstract

The present invention provides a signal attenuator, comprising: a plurality of MOS tube branches and a resistance network composed of resistances between different MOS tube branches and resistances between each MOS tube branch and ground, wherein each The MOS transistor branch includes a first MOS transistor, a second MOS transistor and an intermediate node MOS transistor. The drain of the first MOS transistor is connected to the source of the second MOS transistor and is connected to the drain of the intermediate node MOS transistor. The source of the node MOS transistor is grounded, the source of the first MOS transistor is used as the first node of each MOS transistor branch, and the drain of the second MOS transistor is used as the second node of each MOS transistor branch; on the far left In the first MOS tube branch, the resistance ratio relationship between the intermediate node MOS tube of the branch and the second MOS tube makes the output signal of the signal attenuator irrelevant to the first MOS tube of the branch. The invention can reduce the non-linear voltage generated by the signal attenuator in a specific state and improve the quality of the output signal.

Description

technical field [0001] The present invention relates to the technical field of signal processing, in particular to a signal attenuator. Background technique [0002] CMOS RF receiving front-end is an important module in various low-cost communication chips. In some specific cases, the RF receiving front end can receive a relatively large signal. In order to cope with this situation, it is usually necessary to add a first-stage signal attenuator before the low-noise amplifier to attenuate the signal to a certain extent, so as to avoid low noise. The noise is saturated. [0003] In lower frequency receivers (such as FM receivers), a simple R-2R array and MOS transistor switches can usually be used to realize the attenuator. The basic structure of a typical R-2R attenuator is as follows figure 1 As shown in the figure, the input signal is attenuated by the resistor divider, and the conduction route is selected through the MOS tube switch to adjust the attenuation degree. Wh...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H11/24
CPCH03H11/245
Inventor 高鹏乔峻石赖玠玮
Owner BEIJING SPREADTRUM HI TECH COMM TECH CO LTD