Signal attenuator
A signal attenuation, MOS tube technology, applied in the field of signal processing, can solve problems such as excessive nonlinear voltage, and achieve the effect of improving quality and improving quality
Active Publication Date: 2019-10-22
BEIJING SPREADTRUM HI TECH COMM TECH CO LTD
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Problems solved by technology
[0005] For larger signals, disconnecting the leftmost branch of the attenuator at the maximum attenuation state will generate excessive nonlinear voltage, and eventually cause large distortion of the output signal
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[0018] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0019] An embodiment of the present invention provides a signal attenuator, such as figure 2 As shown, the signal attenuator includes:
[0020] A plurality of MOS tube branches and a resistance network, the resistance network is composed of the resistance between different MOS tube branches and the resistance between each MOS tube branch an...
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The invention provides a signal attenuator. The signal attenuator comprises a plurality of MOS transistor branches and a resistance network formed by resistors between different MOS transistor branches and resistors between the MOS transistor branches and the ground, wherein each MOS transistor branch comprises a first MOS transistor, a second MOS transistor and an intermediate node MOS transistor; the drain electrode of the first MOS transistor is connected with the source electrode of the second MOS transistor and is connected to the drain electrode of the intermediate node MOS transistor, and the source electrode of the intermediate node MOS transistor is grounded, and the source electrode of the first MOS transistor is used as a first node of each MOS transistor branch, and the drain electrode of the second MOS transistor is used as a second node of each MOS transistor branch; and in the first MOS transistor branch on the leftmost side, the resistance matching relation between themiddle node MOS transistor and the second MOS transistor of the branch enables the output signal of the signal attenuator to be irrelevant to the first MOS transistor of the branch. According to the invention, the nonlinear voltage generated by the signal attenuator in a specific state can be reduced, and the quality of an output signal is improved.
Description
technical field [0001] The invention relates to the technical field of signal processing, in particular to a signal attenuator. Background technique [0002] The CMOS radio frequency receiving front end is an important module in various low-cost communication chips. In some specific cases, the RF receiving front end can receive quite large signals. In order to deal with this situation, it is usually necessary to add a signal attenuator before the low noise amplifier to attenuate the signal to a certain extent to avoid low noise. The noise amplifier is saturated. [0003] In lower frequency receivers (such as FM receivers), the attenuator can usually be realized by a simple R-2R array and a MOS tube switch. The basic structure of a typical R-2R attenuator is as figure 1 As shown, the input signal is attenuated by resistive voltage division, and the conduction route is selected through the MOS tube switch to adjust the attenuation degree. When the attenuation is the most, ...
Claims
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IPC IPC(8): H03H11/24
CPCH03H11/245
Inventor 高鹏乔峻石赖玠玮
Owner BEIJING SPREADTRUM HI TECH COMM TECH CO LTD