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Faraday Shield Barrel, Ring, Chamber Assembly and Heavy Sputtering Chamber

A technology of Faraday shielding and annular parts, which is applied in the field of chamber components, heavy sputtering chambers, Faraday shielding barrels, and annular parts, can solve the problems that the requirements cannot be well met, the rate of heavy sputtering etching is low, etc. Achieve the effect of increasing the density, reducing the eddy current, and reducing the size of the capacitance

Active Publication Date: 2020-11-10
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] use image 3 The existing chamber shown performs heavy sputter etching, and the rate RR of heavy sputter etching is too low to meet the requirements well

Method used

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  • Faraday Shield Barrel, Ring, Chamber Assembly and Heavy Sputtering Chamber
  • Faraday Shield Barrel, Ring, Chamber Assembly and Heavy Sputtering Chamber
  • Faraday Shield Barrel, Ring, Chamber Assembly and Heavy Sputtering Chamber

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Embodiment Construction

[0043] In order for those skilled in the art to better understand the technical solution of the present invention, the Faraday shielding bucket, ring, chamber assembly and re-sputtering chamber provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0044] Before describing the Faraday shielding barrel, annular member, chamber assembly and heavy sputtering chamber provided by the embodiment of the present invention, first analyze the reason for the low heavy sputtering etching rate RR in the prior art:

[0045] It can be seen from the knowledge of transformer mutual inductance that the inductance coil 5 is used as the primary coil, and the AC current I of 2MHz is loaded on it. 1 , the eddy electric field generated in the chamber will induce an electromotive force ξ on the Faraday shielded barrel 10 as the secondary coil 2 :

[0046]

[0047] Wherein, M is the mutual inductance between the inductance coil 5 and the ...

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PUM

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Abstract

The invention provides a Faraday shielding barrel, an annular piece, a chamber assembly and a re-sputtering chamber. An auxiliary structure is formed at the position, spaced from the annular piece, ofthe Faraday shielding barrel; and the auxiliary structure is used for reducing the ratio of the opposite area of parallel plates of a distributed capacitor formed between the Faraday shielding barreland the annular piece to the distance between the parallel plates so as to reduce the capacitance value of the distributed capacitor. An auxiliary structure is formed at the position, spaced from theFaraday shielding barrel, of the annular piece; and the auxiliary structure is used for reducing the ratio of the opposite area of the parallel plates of the distributed capacitor formed between theFaraday shielding barrel and the annular piece to the distance between the parallel plates so as to reduce the capacitance value of the distributed capacitor. The chamber assembly and the re-sputtering chamber are capable of improving the re-sputtering etching rate.

Description

technical field [0001] The invention belongs to the technical field of semiconductor processing equipment, and in particular relates to a Faraday shielding barrel, a ring, a chamber assembly and a heavy sputtering chamber. Background technique [0002] Traditional sputtering technology cannot control the direction of sputtered particles, which limits the ability of sputtering to enter through holes and narrow channels with high aspect ratio, such as figure 1 Shown issues with top overhang and bottom corner underfill. In order to improve this problem, the plasma physical vapor deposition technology is firstly used, which can not only generate metal ions by using high-density plasma sputtering targets, but also add an appropriate amount of bias voltage under the substrate to attract the plasma towards the substrate, but the improvement effect is not enough. The heavy sputtering technology appeared later, that is, the energy and direction of movement of metal ions or argon ion...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/02C23C14/16
CPCC23C14/022C23C14/165C23C14/34
Inventor 刘建生侯珏张彦召佘清
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD