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Plasma etching device and etching method of grid electrode

A technology of plasma and etching equipment, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, discharge tubes, etc., can solve the problems that it is difficult to meet the needs of higher etching selection ratios, and achieve both etching rate and etching Eclipse selection ratio, reduce damage, increase the effect of adjustment range

Active Publication Date: 2012-01-11
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned plasma etching device has been difficult to meet the need for higher etching selectivity

Method used

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  • Plasma etching device and etching method of grid electrode
  • Plasma etching device and etching method of grid electrode
  • Plasma etching device and etching method of grid electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] figure 2 It is a schematic diagram of the plasma etching device according to the first embodiment of the present invention.

[0051] Please refer to figure 2 , the plasma etching device includes a process chamber wall 100 , a first electrode 102 and a second electrode 104 disposed opposite to each other, and a process chamber is formed between the first electrode 102 and the second electrode 104 . In this embodiment, the first electrode 102 is located at the top of the process chamber wall 100 , and the second electrode 104 is located at a certain distance above the bottom of the process chamber wall 100 . Therefore, the first electrode 102 and the second electrode 104 can also be referred to as an upper electrode and a lower electrode, respectively.

[0052] Wherein, the second electrode 104 is used to place a workpiece 106 (such as a semiconductor wafer) to be processed. For example, the second electrode 104 can be an electrostatic chuck.

[0053] The process ch...

Embodiment 2

[0062] image 3 It is a schematic diagram of the second embodiment of the plasma etching device of the present invention.

[0063] Please refer to image 3 , in this embodiment, the bias radio frequency power supply 150 is a radio frequency power supply in intermittent ignition mode. Wherein, the power output time duty cycle of the bias RF power supply 150 is fixed or adjustable, and when adjustable, the bias RF power supply 150 can be connected with the RF power regulator 130, and the RF power regulator 130 The time output duty cycle of the bias RF power supply 150 is adjusted. In addition, other aspects of the plasma etching device in this embodiment may be the same as those in the first embodiment or corresponding adjustments may be made compared to the first embodiment, which will not be described here again.

[0064] Since the bias radio frequency power supply 150 is in the discontinuous ignition mode, when other conditions are the same, the total energy output by the ...

Embodiment 3

[0066] Figure 4 It is a schematic diagram of the third embodiment of the plasma etching device of the present invention.

[0067] Please refer to Figure 4 , in this embodiment, the excitation RF power source 120 and the bias RF power source 150 are both RF power sources in discontinuous ignition mode. Wherein, the time duty ratio of the power output of the radio frequency power supply of the intermittent starting mode is fixed or adjustable; when adjustable, the excitation radio frequency power supply 120 and the bias radio frequency power supply 150 can be connected with the radio frequency power supply regulator 130, by the The RF power regulator 130 adjusts the time output duty cycle of the two. Wherein, the RF power regulator 130 can adjust the excitation RF power 120 and the bias RF power 150 separately or simultaneously.

[0068] In addition, there may be two RF power regulators 130, which are respectively connected to the exciting RF power source 120 and the bias R...

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PUM

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Abstract

The invention relates to a plasma etching device comprising a technological cavity provided with a first electrode and a second electrode, an excited radio-frequency power supply electrically connected with the first electrode, and a biased radio-frequency power supply electrically connected with the second electrode, wherein the first electrode and the second electrode are oppositely placed, andthe technological cavity is arranged between the first electrode and the second electrode; the excited radio-frequency power supply is used for inputting excited radio-frequency power to the first electrode; the biased radio-frequency power supply is used for inputting biased radio-frequency power to the second electrode; and the excited radio-frequency power supply and / or biased radio-frequency power supply are / is radio-frequency power supplies in an interrupted build-up mode of luminance, wherein the interrupted luminance building-up mode has power output in partial time of a unit radio-frequency period. The plasma etching device can provide a high etching selection ratio when used for etching. The invention also provides an etching method of a grid electrode, which can give consideration to the etching speed and the etching selection ratio.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a plasma etching device and a gate etching method. Background technique [0002] In the semiconductor integrated circuit manufacturing process, a semiconductor structure is formed on a semiconductor substrate through a series of processes such as deposition, photolithography, etching, and planarization. Among them, the photolithography process is used to form a mask pattern to define the area to be etched; and the etching process is used to transfer the pattern defined by the photolithography to the material layer to form a cross-sectional structure in the material layer. Plasma etching is a commonly used etching process. In the plasma etching process, an appropriate gas is used as the etching gas, an energy source such as a radio frequency source is used to excite the etching gas to form a plasma, and then the plasma is used to etch the area without a photol...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/28H01J37/32
Inventor 杨盟
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD