Piezoelectric film and method for producing same

A manufacturing method and piezoelectric film technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, circuits, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the problem of not obtaining single crystal film, Problems such as inability to apply single crystal film production methods and difficulty in obtaining

Active Publication Date: 2019-11-15
IDEAL STAR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, for PVTs with a VDF ratio of 82 to 90% including the representative example PVT85 / 15 of this patent document 5, a single crystal film cannot be obtained. (or extremely difficult to obtain), only lamellar crystal film
The reason why a single crystal film cannot be obtained from them is that there is no temperature region below the melting point where the dielectric phase becomes a permanent dielectric phase (because there is no temperature below the melting point that changes from a ferroelectric phase to a permanent dielectric phase, that is, the Curie point← Referring to Non-Patent Document 3), the methods for producing single crystal films described in Non-Patent Documents 1 and 2 and Patent Documents 1 and 2 cannot be applied

Method used

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  • Piezoelectric film and method for producing same
  • Piezoelectric film and method for producing same
  • Piezoelectric film and method for producing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-1

[0068] figure 1 It is a process flow chart of the manufacturing method of the blended lamellar crystal piezoelectric film. The manufacturing process of the piezoelectric film is carried out in the order of liquid adjustment process→coating process→drying process→heat treatment process→electrode formation process→polarization treatment process, and the blended sheet crystal piezoelectric film is produced.

[0069] The detailed description of each process of Example 1-1 is listed below.

[0070] Liquid adjustment process

[0071] Select PVT85 / 15 as PVT1, PVT75 / 25 as PVT2, use N,N-dimethylformamide (DMF) as the solvent, and make the mixing weight ratio of PVT1 and PVT2 within the range of 25:75 to 90:10 and 7 different solutions.

[0072] Coating process

[0073] A glass substrate to be a substrate is prepared, and the above-mentioned solution is applied on the above-mentioned glass substrate.

[0074] drying process

[0075] The applied film was dried in a vacuum oven at ...

Embodiment 1-2

[0083] figure 2 It is a process flowchart of the manufacturing method of the blend single crystal piezoelectric film. The manufacturing process of the piezoelectric film is carried out in the order of liquid adjustment process→coating process→drying process→stretching process→heat treatment process→electrode formation process→polarization treatment process to produce a blended single crystal piezoelectric film.

[0084] The detailed description of each process of Example 1-2 is listed below.

[0085] Liquid adjustment process

[0086] Choose PVT85 / 15 as PVT1, choose PVT75 / 25 as PVT2, use N,N-dimethylformamide (DMF) as the solvent, and make the mixing weight ratio of PVT1 and PVT2 in the range of 25:75 to 90:10 and 7 different solutions.

[0087] Coating process

[0088] A glass substrate to be a substrate is prepared, and the above-mentioned solution is applied on the above-mentioned glass substrate.

[0089] drying process

[0090] The applied film was dried in a vacuu...

Embodiment 2

[0100] Table 1 shows the measurement results of remanent polarization Pr, coercive electric field Ec, electromechanical coupling coefficient kt and Comparison table of measurement results of remanent polarization, coercive electric field, and electromechanical coupling coefficient kt of piezoelectric films of comparative examples (1, 2, 3).

[0101] The remanent polarization Pr and the coercive electric field Ec are read from the D (electric displacement)-E (electric field) hysteresis curve measured in the polarization process. Regarding the D-E hysteresis curve, as E, 140MV / m is applied for 6 cycles with a 50mHz triangular wave AC for the flake crystal film, and 6 cycles of 50mHz triangular wave AC are applied for the single crystal film. 120MV / m, the D-E hysteresis curve is obtained from the waveform of the sixth cycle output by the charge amplifier.

[0102] The electromechanical coupling coefficient kt is obtained by washing the polarized sample with hexane and cutting it...

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Abstract

The present invention addresses the problem of improving the piezoelectric properties of a PVT having a VDF content ratio of 82 to 90 mol%, which has excellent deformation resistance, heat resistanceand the like and is typified by a copolymer of vinylidene fluoride VDF with trifluoroethylene TrFE copolymerized at a polymerization ratio of 85:15 by mole (also referred to as "PVT 85 / 15"), and to provide a piezoelectric film having piezoelectric properties superior to those of a PVT having a VDF content ratio of less than 82 mol% typified by PVT 75 / 25 that exhibits the best piezoelectric properties in the past and a method for producing the piezoelectric film. A piezoelectric film comprising a mixture of two types of copolymers having different (vinylidene fluoride VDF) / (trifluoroethylene TrFE) polymerization ratios from each other (e.g., a fist copolymer PVT 85 / 15 and a second copolymer PVT 75 / 25).

Description

technical field [0001] The present invention relates to at least two kinds of copolymers consisting of copolymers of vinylidene fluoride (VDF) and trifluoroethylene (TrFE) {P(VDF / TrFE) or hereinafter simplified and specially denoted as PVT}, and the polymerization ratios of VDF and TrFE are different. (hereinafter referred to as the first copolymer PVT1 and the second copolymer PVT2) mixture (blend) of the piezoelectric film formed, and its production method. Background technique [0002] The ferroelectric polymer, that is, the copolymer of vinylidene fluoride (VDF) and trifluoroethylene (TrFE) {P (VDF / TrFE) or the following simplified and specially recorded as PVT} has such a large spontaneous polarization (residual pole The excellent piezoelectricity represented by the chemical (Chem) has been studied for its application to various elements and devices such as piezoelectric sensors, transducers, infrared pyroelectric sensors, etc., which make effective use of flexibility a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/193H01L41/45C08J5/18C08L27/16
CPCC08J5/18C08L27/16C08L2203/16C08L2205/025H10N30/857H10N30/077H10N30/098H10N30/308C08F214/22H10N30/045H10N30/10513
Inventor 表研次鲛泽剑大东弘二
Owner IDEAL STAR
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