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Oxidation post-treatment method of oxygen-containing elements to improve the performance of sic MOS devices

A post-processing and performance technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of rare and degraded SiCMOS device threshold voltage stability, threshold voltage instability, etc.

Active Publication Date: 2021-07-13
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the main reason for the instability of the threshold voltage of SiC MOS devices is the oxide trap near the interface and the mobile charge in the gate oxide, which is mainly caused by the charge trapping and the movement of the mobile charge under the action of electrical stress.
By improving the cleanliness of the environment where the device is located, the influence of mobile charges is getting smaller and smaller, but the near-interface oxide traps still affect the stability of SiC MOS devices
Most of the existing interface passivation processes improve the interface characteristics by post-oxidation annealing (POA), but deteriorate the threshold voltage stability of SiC MOS devices to varying degrees. In particular, the improved SiCMOS stability developed for oxidation processes Sexual methods are even rarer

Method used

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  • Oxidation post-treatment method of oxygen-containing elements to improve the performance of sic MOS devices
  • Oxidation post-treatment method of oxygen-containing elements to improve the performance of sic MOS devices
  • Oxidation post-treatment method of oxygen-containing elements to improve the performance of sic MOS devices

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Embodiment 1, ECR microwave plasma assisted O 2 post-oxidation treatment

[0034] Step A: Slicing the SiC wafer with a cutting size of 1 cm×1 cm, and cleaning the SiC surface by RCA process.

[0035] Step B, place the cleaned SiC wafer on N 2 Under the protection of the tube furnace, the temperature is raised to 1180°C, oxygen is introduced, the oxygen flow rate is 1000sccm, the oxidation time is 3h, and the thickness of the oxide film after oxidation is 50nm.

[0036] Step C, put the sample into the plasma reaction chamber, after cleaning and drying, send the sample into the sample delivery chamber 2 of the ECR microwave plasma low-temperature oxidation equipment through the sample delivery rod 4, and then put the sample into the plasma through the delivery track 6 On the reaction platform 5 in the reaction chamber.

[0037] Step D, turn on the ECR plasma generation system 12, and use the vacuum equipment 11 to reduce the vacuum degree of the reaction chamber 14 to ...

Embodiment 2

[0041] Embodiment 2, ECR microwave plasma assisted O 2 / O 3 Mixed gas oxidation after treatment

[0042] Steps A, B, and C are the same as in Example 1.

[0043] Step D, open the ECR plasma generation system 12, and use the vacuum equipment 11 to reduce the vacuum degree of the reaction chamber 14 to 10 -4 Pa, turn on the base heating device 7, heat the sample to 600°C, turn on the ECR plasma generation system 12, and adjust the power of the microwave power supply to 900W. Open the 1st, 2 flowmeters 8,8a, flow is respectively the O of 60sccm and 100sccm 2 and O 3 Into the plasma resonance chamber 13, start the post-oxidation treatment.

[0044] Step E, after 20 minutes of post-oxidation treatment, close the first and second flowmeters 8 and 8a, close the ozone generator 9, keep the vacuum equipment 11 in operation, close the ECR plasma generation system 12, and wait until the vacuum degree drops to 10 -3 Below Pa, open the 4th flowmeter 8c and feed N 2 Gas, in N 2 Cool...

Embodiment 3

[0046] Embodiment 3, ECR microwave plasma assisted O 2 / H 2 O mixed gas oxidation after treatment

[0047] Steps A, B, and C are the same as in Example 1.

[0048] Step D, turn on the ECR plasma generation system 12, and use the vacuum equipment 11 to reduce the vacuum degree of the reaction chamber 14 to 10 -4 Pa, turn on the base heating device 7, heat the sample to 600°C, turn on the ECR plasma generation system 12, adjust the power of the microwave power supply to 900W, open the bubble chamber 10, heat the water in it to 90°C, and then turn on the first, 3 flow meters 8, 8b, the flow rate is respectively 40sccm and 100sccm O 2 and water vapor into the plasma resonance chamber 13 to start post-oxidation treatment.

[0049] Step E, after 20 minutes of post-oxidation treatment, close the first and third flowmeters 8 and 8b, close the bubble chamber 10, keep the vacuum equipment 11 in operation, close the ECR plasma generation system 12, and wait until the vacuum degree dr...

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Abstract

The invention belongs to the technical field of SiC MOS device manufacturing technology, a post-oxidation treatment method of oxygen-containing elements to improve the performance of SiC MOS devices, comprising the following steps: (1) RCA cleaning, (2) dry oxygen oxidation, (3) sample Put it into the plasma reaction chamber, (4) start the post-treatment of plasma-assisted oxidation, (5) finish the post-treatment of plasma-assisted oxidation, (6) perform annealing to activate impurities after ion implantation, and (7) complete the fabrication of SiC MOSFET. SiC / SiO by ECR microwave plasma 2 The interface is post-treated by low-temperature oxidation in an O-containing plasma atmosphere, and ECR microwave plasma has the characteristics of high density, high activity and low damage, which can improve oxidation efficiency, reduce interface damage, and effectively suppress interface states and near-interface oxide traps. The production of SiC / SiO 2 The quality of the interface will ultimately improve the electrical characteristics of SiC MOS devices as a whole.

Description

technical field [0001] The invention relates to an oxidation post-treatment method of oxygen-containing elements for improving the performance of SiC MOS devices, and belongs to the technical field of SiC MOS device manufacturing technology. Background technique [0002] SiC materials are recognized as the third-generation semiconductors in the semiconductor industry, and are mostly used in high-temperature, high-voltage and high-power fields. This is because the SiC semiconductor material itself has the advantages of large band gap, high critical breakdown field strength, and high thermal conductivity. In addition, compared with GaN materials, which are also third-generation semiconductors, SiC can be easily oxidized Obtain good quality insulating gate dielectric SiO 2 . But pure thermal oxidation makes SiC / SiO 2 There are a large number of interface states at the interface, and there are a large number of near-interface traps near the interface, which leads to the decre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/04
CPCH01L21/045H01L29/66068
Inventor 王德君尹志鹏杨超秦福文
Owner DALIAN UNIV OF TECH