A multiple quantum well structure, optoelectronic device epitaxial wafer and optoelectronic device

Abstract

A multi-quantum well structure, a photoelectric device epitaxial wafer and a photoelectric device, wherein the multi-quantum well structure is composed of alternately grown quantum well layers and quantum barrier layers, and each quantum well layer and quantum barrier layer is an uneven structure. By setting the quantum well layer and quantum barrier layer of the multi-quantum well structure as a structure with uneven composition and uneven structure, the photorecombination efficiency, internal quantum efficiency, and luminous efficiency of carriers are improved, and it is applied to optoelectronics In device epitaxial wafers and optoelectronic devices, the preparation of high-power light-emitting diodes, high-power light-emitting lasers, and high-power light-emitting detectors has been realized.

Description

technical field [0001] The disclosure relates to the technical field of semiconductors, in particular to a multi-quantum well structure, an optoelectronic device epitaxial wafer and a photoelectric device. Background technique [0002] Ultraviolet Light Emitting Diode (UVLED) is mostly made of third-generation semiconductor materials. InAlGaN or BAlGaN materials have the characteristics of wide band gap and direct band gap. InAlGaN Or BAlGaN-based UVLEDs have broad application prospects in the fields of sterilization, disinfection, medical treatment and non-line-of-sight optical communication. AlGaN-based UV LEDs can achieve continuously adjustable emission wavelengths in the range of 200nm-360nm, and can be mass-produced on cheap silicon, sapphire, gallium nitride, aluminum nitride and silicon carbide substrates by heteroepitaxial methods. [0003] Existing AlGaN-based UVLEDs often use a multi-quantum well structure with uniform composition and flat structure as the active...

AI Technical Summary

Problems solved by technology

[0003] Existing AlGaN-based UVLEDs often use a multi-quantum well structure with uniform composition and flat structure as the active region of the device (ie, the light-emitting region or the electron-hole recombination region), and the photon recombination efficiency of carriers in the two-dimensional quantum well structure Low, resulting in low internal quantum efficiency, external quantum efficiency and luminous efficiency of the device, and low electro-optical conversion efficiency of light-emitting diodes

Similar to light-emitting diodes, other optoelectronic devices such as light-emitting lasers and light-emitting detectors have problems with low internal quantum efficiency, external quantum efficiency, luminous efficiency, and low electro-optic conversion efficiency.

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