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Method for writing data into flash memory module for preventing power interruption influence

A technology of data writing and power interruption, applied in the direction of data error detection, electrical digital data processing, data processing input/output process, etc., and can solve problems such as damage

Inactive Publication Date: 2019-12-17
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the LSB page on the word line is suddenly powered off during a write operation, the CSB page and MSB page on the word line will also be damaged

Method used

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  • Method for writing data into flash memory module for preventing power interruption influence
  • Method for writing data into flash memory module for preventing power interruption influence
  • Method for writing data into flash memory module for preventing power interruption influence

Examples

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Embodiment Construction

[0017] figure 1 It is a diagram of a memory device according to an embodiment of the present invention. The memory device includes a flash memory module and a flash memory controller. A flash controller is arranged to access the flash modules. A flash controller includes a microprocessor, read-only memory (ROM), control logic, buffers, and interface logic. The ROM is used to store the program code, and the microprocessor is used to execute the program code and control access to the flash memory controller. Control logic includes encoders and decoders. The encoder is used to encode the data written to the flash memory module, thereby generating the corresponding check code (ECC), and the decoder is used to decode the data read from it.

[0018] figure 2 Block A includes N word lines WL0-WLN, and each word line forms three pages. The LSB bits stored in the plurality of cells on the word line form the first page of word lines (LSB page), the CSB bits stored in the pluralit...

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PUM

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Abstract

The invention relates to a method for writing data into a flash memory module for preventing the influence of power interruption, which comprises the following steps of constructing a page state table: in the writing process, enabling the page state table to correspond to each bit of a writing page, and if the data is normally written, enabling the value of the corresponding bit in the page statetable to be 0; when writing exception occurs, the value of a corresponding bit in the page state table is 1, allocating space in a buffer of the storage module to back up data written into a damaged page, and determining whether a specific page into which the data is to be written is damaged or not through the page state table; writing the data into a storage module; if the power is cut off in thewriting process, restarting the storage module; after restarting, enabling the storage module to read the data from the page in which the data is written to reestablish a page state table; writing the data into a page according to the page state table, and determining whether the page into which the data is to be written is damaged or not according to a value in the page state table: when the page is not damaged, directly writing the data into the page; when the page has been corrupted, writing the data backed up in the buffer to the page.

Description

technical field [0001] The invention belongs to flash memory, more specifically, a method for writing data into a storage module. Background technique [0002] In recent decades, the methods of human storage data are changing with each passing day. In pursuit of high reliability, permanent storage is very important. Among them, flash memory (Nand Flash) saves data for a long time, high reliability, high density and low price, so it occupies a large share in the storage market. big space. In the flash memory architecture, storage units are organized in series every 32 or 64. Each string of memory cells has a bitline used to connect to other strings. Control gates are used to connect wordlines (WLs). Page (Page) is the smallest unit of flash memory chip reading, block (Block) is the smallest unit of flash memory chip writing, and every 64 pages is a block. [0003] When the power to the flash memory is suddenly interrupted during a write operation, not only the page curren...

Claims

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Application Information

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IPC IPC(8): G06F3/06G06F11/14
CPCG06F3/0614G06F3/0638G06F3/0679G06F11/1479
Inventor 张为赵创
Owner TIANJIN UNIV
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