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A method for adjusting the band gap in the preparation of hexagonal boron nitride thin films
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A technology for preparing hexagonal boron nitride and thin films, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of large bandgap width of hexagonal boron nitride and poor coverage, etc., to achieve The effect of low cost and simple equipment
Inactive Publication Date: 2021-05-18
ZHEJIANG UNIV
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At present, solar-blind ultraviolet (200-280nm) detection is widely used, but the bandgap of hexagonal boron nitride is too large to cover the entire solar-blind ultraviolet band well, so a method for adjusting the bandgap of hexagonal boron nitride thin films is provided The method has very important application value
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Embodiment 1
[0029] 1) Take four pieces of quartz as insulating substrates, place them in acetone, absolute ethanol and deionized water in turn for ultrasonic cleaning, and dry them;
[0030] 2) Put a quartz substrate on the bracket in the magnetron sputtering furnace, close the furnace door, and reduce the vacuum in the furnace to no higher than 5×10 -3 Pa;
[0031] 3) Introduce a mixture of nitrogen and hydrogen into the sputtering furnace, the proportion of nitrogen is 20%, and the insulating substrate is heated to 400°C, the pressure is adjusted to 1.5Pa, and magnetron sputtering is performed for 1 hour;
[0032] 4) Heating the substrate and the film to 700° C., and annealing for at least 1 hour under the protection of an inert gas.
[0033] 5) Repeat steps 2, 3, and 4 in turn for the second to fourth quartz substrates, wherein the proportions of nitrogen gas during sputtering are adjusted to 46.7%, 73.3% and 100% respectively. The absorption band edge of the prepared hexagonal boron...
Embodiment 2
[0036] 1) Take four monocrystalline silicon wafers as insulating substrates, place them in acetone, absolute ethanol and deionized water in sequence for ultrasonic cleaning, and dry them;
[0037] 2) Put a quartz substrate on the bracket in the magnetron sputtering furnace, close the furnace door, and reduce the vacuum in the furnace to no higher than 5×10 -3 Pa;
[0038] 3) Feed a mixture of nitrogen and hydrogen into the sputtering furnace, grow a hexagonal boron nitride film under the conditions in Table 1, and magnetron sputter for 1 hour;
[0039] Table 1
[0040] Sample serial number 1 2 3 4 Substrate temperature (°C) 400 300 400 400 Sputtering power (W) 300 300 400 300 Sputtering pressure (Pa) 1.5 1.5 1.5 1.0
[0041] 4) Heating the substrate and the film to 700° C., and annealing for at least 1 hour under the protection of an inert gas.
[0042] 5) Utilize the Fourier transform infrared spectrophotometer to measure the in...
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Abstract
The invention discloses a method for adjusting and controlling the band gap in the preparation of a hexagonal boron nitride thin film. In the process of preparing the hexagonal boron nitride thin film, the band gap of the hexagonal boron nitride thin film is controlled by controlling the local mode of the hexagonal boron nitride thin film. The local mode includes the orientation of the local c axis, the area of the local c plane and the local c To reduce the film bandgap by increasing the angle between the local c-axis and the substrate plane, or by reducing the area of the local c-plane, or by increasing the number of local c-direction layers to reduce the film bandgap Gap. The method of the invention realizes the regulation and control of the band gap during the preparation of the hexagonal boron nitride film, uses non-toxic and harmless target material and gas as raw materials, has low cost and simple equipment. The prepared hexagonal boron nitride thin film can be used in ultraviolet light sensing, ultraviolet luminescence, water purification and other fields.
Description
technical field [0001] The invention relates to a preparation method for adjusting and controlling the band gap of a semiconductor thin film belonging to the field of semiconductor materials, in particular to a method for adjusting and controlling the band gap during the preparation of a hexagonal boron nitride thin film. Background technique [0002] Hexagonal boron nitride, known as the third-generation semiconductor material, is a wide bandgap III-V compound with an indirect bandgap. Hexagonal boron nitride atom with sp 2 The hybrid form forms a covalent bond. Hexagonal boron nitride has the advantages of corrosion resistance, high temperature resistance, and high pressure resistance; the band gap of hexagonal boron nitride is 5.8eV, and the absorption band edge is 213nm. It belongs to the deep ultraviolet band and can be used as a deep ultraviolet photodetector light-emitting device. At present, solar-blind ultraviolet (200-280nm) detection is widely used, but the band...
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