Unlock instant, AI-driven research and patent intelligence for your innovation.
Band gap regulation and control method during preparation of hexagonal boron nitride film
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology for preparing hexagonal boron nitride and thin films, which is applied in ion implantation plating, metal material coating technology, coating, etc., can solve the problems of poor coverage and large band gap of hexagonal boron nitride, and achieve Low cost, simple method, and the effect of expanding the detection range
Inactive Publication Date: 2020-01-10
ZHEJIANG UNIV
View PDF5 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
At present, solar-blind ultraviolet (200-280nm) detection is widely used, but the bandgap of hexagonal boron nitride is too large to cover the entire solar-blind ultraviolet band well, so a method for adjusting the bandgap of hexagonal boron nitride thin films is provided The method has very important application value
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0029] 1) Take four pieces of quartz as insulating substrates, place them in acetone, absolute ethanol and deionized water in turn for ultrasonic cleaning, and dry them;
[0030] 2) Put a quartz substrate on the bracket in the magnetron sputtering furnace, close the furnace door, and reduce the vacuum in the furnace to no higher than 5×10 -3 Pa;
[0031] 3) Introduce a mixture of nitrogen and hydrogen into the sputtering furnace, the proportion of nitrogen is 20%, and the insulating substrate is heated to 400°C, the pressure is adjusted to 1.5Pa, and magnetron sputtering is performed for 1 hour;
[0032] 4) Heating the substrate and the film to 700° C., and annealing for at least 1 hour under the protection of an inert gas.
[0033] 5) Repeat steps 2, 3, and 4 in turn for the second to fourth quartz substrates, wherein the proportions of nitrogen gas during sputtering are adjusted to 46.7%, 73.3% and 100% respectively. The absorption band edge of the prepared hexagonal boron...
Embodiment 2
[0036] 1) Take four monocrystalline silicon wafers as insulating substrates, place them in acetone, absolute ethanol and deionized water in sequence for ultrasonic cleaning, and dry them;
[0037] 2) Put a quartz substrate on the bracket in the magnetron sputtering furnace, close the furnace door, and reduce the vacuum in the furnace to no higher than 5×10 -3 Pa;
[0038] 3) Feed a mixture of nitrogen and hydrogen into the sputtering furnace, grow a hexagonal boron nitride film under the conditions in Table 1, and magnetron sputter for 1 hour;
[0039] Table 1
[0040] Sample serial number 1 2 3 4 Substrate temperature (°C) 400 300 400 400 Sputtering power (W) 300 300 400 300 Sputtering pressure (Pa) 1.5 1.5 1.5 1.0
[0041] 4) Heating the substrate and the film to 700° C., and annealing for at least 1 hour under the protection of an inert gas.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Property
Measurement
Unit
purity
aaaaa
aaaaa
Login to View More
Abstract
The invention discloses a band gap regulation and control method during preparation of a hexagonal boron nitride film. In the process of preparing the hexagonal boron nitride film, a hexagonal boron nitride film band gap is controlled by controlling the local modes of the hexagonal boronnitride film, wherein the local modes comprise the local c-axis orientation, the local c-plane area and the local c-direction layer quantity; and the film band gap is reduced by increasing the included angle between the local c-axis and a substrate plane, reducing the local area c surface area or increasing the local c-direction layer quantity. By means of the band gap regulation and control method, the band gap regulation is carried out when the hexagonal boronnitride film is prepared, non-toxic and harmless target materials and gas are used as raw materials, the cost is low, and equipment is simple. The prepared hexagonal boronnitride film can be used in the fields of ultravioletlight sensing, ultraviolet light emitting, water purification and the like.
Description
technical field [0001] The invention relates to a preparation method for adjusting and controlling the band gap of a semiconductor thin film belonging to the field of semiconductor materials, in particular to a method for adjusting and controlling the band gap during the preparation of a hexagonal boron nitride thin film. Background technique [0002] Hexagonal boron nitride, known as the third-generation semiconductor material, is a wide bandgap III-V compound with an indirect bandgap. Hexagonal boron nitride atom with sp 2 The hybrid form forms a covalent bond. Hexagonal boron nitride has the advantages of corrosion resistance, high temperature resistance, and high pressure resistance; the band gap of hexagonal boron nitride is 5.8eV, and the absorption band edge is 213nm. It belongs to the deep ultraviolet band and can be used as a deep ultraviolet photodetector light-emitting device. At present, solar-blind ultraviolet (200-280nm) detection is widely used, but the band...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More