Storage device and operation method thereof

Abstract

The invention provides a storage device and an operation method thereof. A memory storage device is fabricated using a semiconductor fabrication process. Often times, manufacturing variations and / or misalignment tolerances present within the semiconductor fabrication process can cause the memory storage device to differ from other memory storage devices similarly designed and fabricated by the semiconductor fabrication process. For example, uncontrollable random physical processes in the semiconductor fabrication process can cause small differences, such as differences in doping concentrations, oxide thicknesses, channel lengths, structural widths, and / or parasitics to provide some examples, between these memory storage devices. These small differences can cause bit lines within the memorystorage device to be physically unique with no two bit lines being identical. As a result, the uncontrollable random physical processes in the semiconductor fabrication process can cause electronic data read from the memory storage device to propagate along the bit lines at different rates. This physical uniqueness of the bit lines can be utilized to implement a physical unclonable function (PUF)allowing the memory storage device to be differentiated from other memory storage devices similarly designed and fabricated by the semiconductor fabrication process.

Description

technical field [0001] Embodiments of the present invention generally relate to the field of electronic circuits, and more particularly, to memory devices and methods of operating the same. Background technique [0002] An integrated circuit refers to a collection of electronic circuits formed on a semiconductor substrate, such as a silicon crystal as an example, using semiconductor manufacturing processes. Often, manufacturing variations and / or misalignment tolerances present in the semiconductor manufacturing process may cause integrated circuits manufactured by the semiconductor manufacturing process to differ from one another. For example, uncontrollable random physical processes in semiconductor fabrication processes may cause small variances in integrated circuits, such as differences in doping concentration, oxide thickness, channel length, structure width, and / or parasitic effects, as some examples. These small differences remain within the process limits of the sem...

AI Technical Summary

Problems solved by technology

Often, manufacturing variations and / or misalignment tolerances present in the semiconductor manufacturing process can cause integrated circuits manufactured by the semiconductor manufacturing process to differ from each other

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