Ti-ga-sb phase change material, phase change memory and preparation method of ti-ga-sb phase change material

Abstract

The invention discloses a Ti-Ga-Sb phase-change material, a phase-change memory and a preparation method of the Ti-Ga-Sb phase-change material, belonging to the field of phase-change storage materials, and the Ti-Ga-Sb phase-change material is Ti, Sb , the chemical formula of Ga element composition is Ti x Ga y Sb 100‑x‑y The material is obtained by using Sb as the base material and doping Ti and Ga into the base material; wherein, x and y are the percentages of atoms, and 0<x<50, 0<y<50, 0 <x+y<60. The Ti-Ga-Sb phase-change material of the present invention has a simple and convenient preparation method, and compared with traditional phase-change materials, the prepared Ti-Ga-Sb phase-change material has a smaller difference in phase-change density, and can While ensuring the thermal stability of phase change materials, the crystallization efficiency of phase change materials is greatly improved, the stability and accuracy of information data storage of phase change materials are guaranteed, the efficiency of information storage of phase change memory is improved, and the service life of phase change memory is extended. At the same time, the functionality of the phase change memory is greatly improved.

Description

technical field [0001] The invention belongs to the field of phase-change memory materials, and in particular relates to a Ti-Ga-Sb phase-change material and a preparation method thereof, as well as the application of the Ti-Ga-Sb phase-change material in phase-change memory. Background technique [0002] In the era of big data, the status of memory is becoming more and more prominent. Both the storage of information data and the transmission of information data pose new challenges to traditional memory. The research and development of new memory has also become an important part of technological innovation. Phase change memory is an excellent non-volatile memory device, which has the characteristics of fast read and write speed, large capacity and low production cost. It is currently one of the most promising next-generation memory devices. Phase change memory mainly uses the resistance difference between the crystalline state and the amorphous state of the phase change mat...

AI Technical Summary

Problems solved by technology

However, the crystallization temperature and ten-year data retention temperature of existing phase change materials are relatively low. For example, the crystallization temperature of Ge-Sb-Te phase change material is 150°C, and the ten-year data retention temperature is 85°C. Poor thermal stability; this greatly restricts the application of phase change materials in extreme environments

[0004] At the same time, when the phase change memory material in the existing phase change memory is used, there is often a large density difference between the crystalline state and the amorphous state, for example, in the amorphous Ge-Sb-Te phase change material, The lone pair electrons of the chalcogenide Te element will lead to the formation of a large number of vacancies, which will cause a large number of voids in the phase change material, resulting in a large density difference between the crystalline state and the amorphous state, usually above 8%.

Such a large difference in phase change density has far exceeded the influence of thermal expansion and contraction of phase change materials, which can easily lead to voids in phase change materials during the phase change process, and these voids usually gradually gather at the electrodes during the working process. Detach the phase change material from the electrode, eventually causing device failure and affecting the application reliability and service life of the phase change memory

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