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Thin film, coating, compound target material, manufacturing method and application thereof

A compound and target technology, which is applied in the fields of thin films, applications, coatings, compound targets and their manufacturing methods, can solve the problems of poor application performance of chalcogen compounds, achieve uniform microstructure and chemical composition distribution, and reduce maintenance and cost, the effect of improving the yield rate

Active Publication Date: 2022-02-08
PIONEER MATERIALS INC CHENGDU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Based on the above-mentioned deficiencies, the present application provides a thin film, a coating, a compound target and its manufacturing method and application, so as to partially or completely improve or even solve the problem of poor application performance of existing chalcogen compounds

Method used

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  • Thin film, coating, compound target material, manufacturing method and application thereof
  • Thin film, coating, compound target material, manufacturing method and application thereof
  • Thin film, coating, compound target material, manufacturing method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Manufacturing process of Ge12As30Se50B8 OTS sputtering target:

[0058] First prepare Se with a purity of 5N–6N (99.999%-99.9999% purity) and 200-mesh B element powder according to the corresponding weight ratio, place it in a high-purity quartz tube reaction vessel, and then evacuate it to make the vacuum in the vessel degrees up to 1×10 -2 to 1×10 -3 Pa, and then seal the exhaust pipe so that the quartz tube is completely in a sealed state.

[0059]Put the sealed and evacuated quartz tube into a resistance heating furnace for heating from room temperature to 380°C-400°C, at this time the Se element is in a molten state. At this temperature, Se atoms and B powder react to form B2Se3 compound with lower melting point. It was maintained at this temperature for 3 hours. The quartz tube is placed on a device that can be shaken mechanically. Under the condition of maintaining high temperature, the quartz tube will be shaken continuously at a frequency of 0.5Hz, so as t...

Embodiment 2

[0066] Manufacturing process of B8C2Ge12As32Se46 OTS sputtering target:

[0067] First, prepare Se with a purity of 5N–6N (99.999%-99.9999% purity) and B4C powder with a size of about 50 μm according to the corresponding weight ratio, place it in a high-purity quartz tube reaction vessel, and then evacuate it to make the inside of the vessel The vacuum degree reaches 1×10 -2 to 1×10 -3 Pa, and then seal the exhaust pipe so that the quartz tube is completely in a sealed state. Using about 50 μm of B4C powder, the surface reaction area is much larger, which provides better kinetic conditions for accelerating the reaction between B4C powder and Se atoms.

[0068] Put the sealed and evacuated quartz tube into a resistance heating furnace for heating from room temperature to 380°C-400°C, at this time the Se element is in a molten state. At this temperature, Se atoms and B4C powder react to form B2Se3 and CSe2 compounds with lower melting points, respectively. It was maintained ...

Embodiment 3

[0074] Manufacturing process of Ge10As31Se46Ga5B8 OTS sputtering target:

[0075] First, prepare Se with a purity of 5N–6N (99.999%-99.9999% purity) and B powder with a size of about 50 μm according to the corresponding weight ratio, place it in a high-purity quartz tube reaction vessel, and then evacuate it to make the inside of the vessel The vacuum degree reaches 1×10 -2 to 1×10 -3 Pa, and then seal the exhaust pipe so that the quartz tube is completely in a sealed state.

[0076] Put the sealed and evacuated quartz tube into a resistance heating furnace for heating from room temperature to 380°C-400°C, at this time the Se element is in a molten state. At this temperature, Se atoms and B powder react according to equation (1) to form B2Se3 compounds with a lower melting point. It was maintained at this temperature for 3 hours. The quartz tube is placed on a device that can be shaken mechanically. Under the condition of maintaining high temperature, the quartz tube will...

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Abstract

A thin film, a coating, a compound target material and a manufacturing method and application thereof belong to the field of switch materials. Exemplary schemes of the present application dope boron and / or carbon into chalcogen compounds to form compounds. And in the X-ray diffraction peaks of this compound, neither the diffraction peak of boron carbide nor the diffraction peak of chalcogen compound exists. Such compounds have sensitive voltage-response properties and can be rapidly transformed from a non-conductive state to a conductive state by an applied voltage.

Description

technical field [0001] The present application relates to the field of switch materials, in particular, to a thin film, a coating, a compound target and a manufacturing method and application thereof. Background technique [0002] The research and development of various new materials in phase change memory (Phase Change Memory, PCM for short) and phase change non-volatile memory (Non-Volatile Memory, NVM) have been highly concerned and widely used. These materials usually exhibit a nonlinear current-voltage curve (I-V Curve), and are therefore suitable for use in non-volatile memory chips based on phase change materials. The material can change the resistance by an order of magnitude under the drive of voltage, so as to switch from almost non-conductive to conductive. Therefore, it can be used as a switch material in a memory to achieve the purpose of reading / writing information storage. Typical representatives of such materials are Chalcogenide Compounds. It is desired t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/06H01L45/00
CPCC23C14/3407C23C14/067C23C14/06C23C14/3414C23C14/0036H10N70/231H10N70/026H10N70/011
Inventor 李宗雨丘立安
Owner PIONEER MATERIALS INC CHENGDU
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