Read-write circuit and read-write method of memristor

Abstract

The invention discloses a read-write circuit and a read-write method of a memristor. The read-write circuit mainly comprises a read circuit and a write circuit. The write circuit comprises: a first voltage follower circuit and a first voltage selector electrically connected with the memristor storage array. The read-write circuit further comprises a second voltage follower circuit and a second voltage selector which are electrically connected with the memristor storage array. Voltage stable following during bipolar writing is selected through the selector. Meanwhile, the reading circuit is provided with a variable resistor to select an access mode. The actual read-out voltage and the output voltage passing through the reference resistor under the same read-out voltage are input into a differential amplifier to obtain read-out data. According to the read-write circuit and the read-write method, the read-write circuit is simplified, high-speed stable read-write voltage can be provided, random fluctuation of the memristor is considered in the design of the read-out circuit, the stability of the memristor circuit is improved, and the read circuit is also suitable for binary and multi-value memristors.

Description

technical field [0001] The invention belongs to the field of read-write circuits for memristors, and more specifically relates to a read-write circuit and a read-write method for memristors. Background technique [0002] Memory materials based on memristive materials, such as materials based on HfOx or similar materials, can be switched between high resistance, low resistance and multi-resistance by applying an appropriate voltage to it. Generally speaking, the low-resistance state is the state in which the conductive path is formed, with a low resistance value, and the high-resistance state is the state in which the conductive path is disconnected, with a high resistance value. The memristive material responds to different stimuli to form a variety of different The resistive state is used to store or read data. [0003] The storage and read operations of memristors include a variety of voltages with different amplitudes. For example, the most basic operations in the read a...

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Problems solved by technology

For the above-mentioned various operations, it is necessary to quickly and accurately apply voltage to the memristor electrode terminals, and at the same time, the resistance state of the memristor changes rapidly with the application of various operating voltages, so the applied write voltage must have a good stability and does not drift with changes in the resistance of the memgroup, otherwise it will easily lead to write failure or over-operation, resulting in greater random fluctuations in the resistance distribution, resulting in errors in reading data

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