Bearing device, process chamber and semiconductor processing equipment

Abstract

The invention discloses a bearing device, a process chamber and semiconductor processing equipment. The bearing device comprises an electrostatic chuck and a supporting ring arranged around the circumferential side wall of the electrostatic chuck, wherein the electrostatic chuck and the supporting ring jointly bear a to-be-machined part. The bearing device further comprises a first driving assembly and a second driving assembly, wherein the first driving assembly is used for driving the supporting ring to move to a first unloading position so as to separate the to-be-machined part from the electrostatic chuck; and the second driving assembly is used for driving the to-be-machined part to move to a second unloading position so as to separate the to-be-machined part is separated from the supporting ring. When the supporting ring jacks up the to-be-machined part, the supporting ring is in uniform annular surface contact with the to-be-machined part, the phenomenon that the to-be-machinedpart is uneven in stress due to piece sticking and the like can be avoided. In addition, when the to-be-machined part is jacked up by the second driving assembly, only the weight of the to-be-machinedpart needs to be overcome, and thus the phenomenon that the to-be-machined part deviates is avoided.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a carrying device, a process chamber including the carrying device, and semiconductor processing equipment including the process chamber. Background technique [0002] Generally, after the wafer enters the process chamber, the electrostatic chuck uses a high-voltage DC voltage to adsorb and fix the wafer, and then the wafer undergoes a process. After the process is completed, the electrostatic chuck applies a reverse high-voltage DC voltage to the wafer. The wafer is dechucked, and then the needle is lifted to separate the wafer from the electrostatic chuck, and finally passed out of the chamber by the robot. [0003] However, in the above-mentioned structure, the wafer is lifted up directly by using the lifting pin, and the lifting pin is in local point contact with the wafer. The pin-up method will cause uneven force on the wafer, resulting in offse...

AI Technical Summary

Problems solved by technology

[0003] However, in the above-mentioned structure, the wafer is lifted up directly by using the lifting pin, and the lifting pin is in local point contact with the wafer. The pin-up method will cause uneven force on the wafer, resulting in offset

This in turn leads to scratches on the wafer, increases the risk of particles in the process chamber, causes the machine to fail to operate normally, and may even cause debris, resulting in serious losses

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