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Local x decoder and storage system

A storage system and decoder technology, applied in information storage, static memory, read-only memory, etc., can solve problems such as increased drain leakage and damage to the local X decoder 2

Active Publication Date: 2021-09-03
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the threshold voltage VT drifts too much, it will lead to increased gate induced drain leakage (GIDL)
When the local X decoder 2 is in the above situation for a long time (such as the above-mentioned erasure time with trap interference), it will cause the local X decoder 2 to be damaged

Method used

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  • Local x decoder and storage system

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Embodiment Construction

[0047] image 3 It is a principle block diagram of the storage system 3 according to an embodiment of the present invention. The storage system 1 can be a non-volatile storage system such as a NOR flash memory system, and includes a storage unit 31, a local X decoder 30, an erase mode decoder 32, a local word line decoder 33, a memory bank decoder 34, a global word Line decoder 35 , bank mode decoder 36 , sector decoder 37 and power supply 38 .

[0048] The power supply 38 is connected to the erase mode decoder 32 and the bank decoder 34 , respectively, and is used to generate the first voltage source VPPX to the erase mode decoder 32 and the bank decoder 34 . The first voltage source VPPX is used to supply power to the memory array ( image 3 not shown in ) multiple memory banks.

[0049] The memory bank decoder 34 is respectively connected with the local word line decoder 33, the global word line decoder 35 and the power supply 38. The memory bank decoder 34 acts as a vol...

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Abstract

The invention relates to a local X decoder and storage system. The local X decoder includes: a decoding unit for generating word line signals for memory cells in the memory array of the memory system; and an unselected erasure detection unit connected to the decoding unit, the unselected erasure detection unit The unit is used to control the voltage of the decoding unit coupled to the word line signal according to the unselected erase mode signal generated by the erase mode decoder of the storage system, so that when the storage unit is in the storage system When not selected in the erase mode, the word line signal can be floated to the same level as the well of the memory cell.

Description

technical field [0001] The present invention relates to a local X decoder and related memory system, and more particularly to a local X decoder and related memory system for avoiding well-disturbed errors caused by unselected word lines in erase mode. Background technique [0002] figure 1 It is a functional block diagram of a storage system 1 in the prior art. The memory system 1 may be a NOR flash memory system, and includes: memory cells; a local word line decoder for generating a local word line signal PWL; a local X decoder (row decoder) for generating a word line signal WL; a global word line decoder for the first global word line signal GWL_b and the second global word line signal GWL; a power supply for generating a voltage source VPPX; and a power supply for generating the corresponding local X decoder and the global word line decoder, respectively Voltage source SVPPX, VEEX, and a plurality of voltage source decoders of SVEEX, the plurality of voltage source deco...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/08
CPCG11C16/08G11C8/10G11C8/12G11C16/0483G11C16/14G11C16/30
Inventor 唐原徐仁泰
Owner WUHAN XINXIN SEMICON MFG CO LTD